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NX6306GI

更新时间： 2024-11-09 14:18:35
品牌 Logo 应用领域
日电电子 - NEC 通信光纤
页数 文件大小 规格书
3页 93K
描述
DFB Laser Diode Emitter, 1280nm Min, 1335nm Max, 622Mbps, Through Hole Mount, CAN PACKAGE-4

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NX6306GI 技术参数

是否Rohs认证：不符合生命周期：Transferred
Reach Compliance Code：compliant风险等级：5.89
Is Samacsys：N主体高度：5.17 mm
主体长度或直径：4.3 mm通信标准：ITU-T, OC-3, CO-12, SDH
数据速率：622 Mbps最长下降时间：0.5 ns
光纤设备类型：DFB LASER DIODE EMITTERJESD-609代码：e0
安装特点：THROUGH HOLE MOUNT信道数量：1
最高工作温度：85 °C最低工作温度：-40 °C
最大工作波长：1335 nm最小工作波长：1280 nm
上升时间：0.5 ns电源电流：0.6 mA
最大供电电压：1.6 V标称供电电压：1.1 V
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
最小阈值电流：30 mA传输类型：DIGITAL
Base Number Matches：1

NX6306GI 数据手册

 浏览型号NX6306GI的Datasheet PDF文件第2页浏览型号NX6306GI的Datasheet PDF文件第3页 
PRELIMINARY DATASHEET  
NEC's 1310 nm InGaAsP MQW DFB  
LASER DIODE IN CAN PACKAGE  
FOR 155 Mb/s AND 622 Mb/s APPLICATIONS  
NX6306  
Series  
DESCRIPTION  
FEATURES  
• OPTICAL OUTPUT POWER:  
PO = 5.0 mW  
• LOW THRESHOLD CURRENT:  
ITH = 10 mA @ TC = 25°C  
• HIGH SPEED:  
tr = 0.5 ns MAX  
tf = 0.5 ns MAX  
NEC's NX6306 Series is a 1310 nm Multiple Quantum Well  
(MQW) structured Distributed Feed-Back (DFB) laser diode  
with InGaAs monitor PIN-PD. This device is ideal for Synchro-  
nous Digital Hierarchy (SDH) systems and ITU-T recommen-  
dations.  
• SMSR:  
45 dB @ TYP  
APPLICATIONS  
• 156 Mb/s: OC-3 (SR, IR-1, LR-1)  
• WIDE OPERATING TEMPERATURE RANGE:  
TC = -40 to +85°C  
• InGaAs MONITOR PIN-PD  
• 622 Mb/s: OC-12 (SR, IR-1, LR-1)  
• CAN PACKAGE:  
ø5.6 mm  
• BASED ON TELCORDIA RELIABILITY  
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)  
PART NUMBER  
NX6306 Series  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
VOP  
ITH  
Operating Voltage, PO = 5.0 mW, TC = -40 to +85°C  
V
–
1.1  
1.6  
Threshold Current  
mA  
mA  
–
–
10  
30  
20  
40  
TC = 85°C  
PTH  
Threshold Output Power, TC = -40 to +85°C, IF = ITH  
µW  
–
100  
200  
ηd  
Differential Efficiency (Flat glass type: NX6306S Series)  
(Aspherical lens type: NX6306G Series)  
W/A  
0.2  
0.2  
0.35  
0.3  
–
–
ηd (@ 85°C)  
ηd (@ 25°C)  
∆ηd  
λp  
Temperature Dependence  
of Differential Efficiency  
dB  
-3.0  
-2.5  
–
∆ηd = 10 log  
Peak Emission Wavelength,  
PO = 5.0 mW, RMS (-20 dB), TC = -40 to +85°C  
nm  
1280  
–
1335  
SMSR  
Side mode Suppression Ratio  
PO = 5.0 mW, RMS (-20 dB), TC = -40 to +85°C  
dB  
deg  
deg  
ns  
30  
–
45  
35  
30  
–
–
40  
θ⊥  
θ||  
tr  
Vertical Beam Angle1, PO = 5.0 mW, FAHM2  
Lateral Beam Angle1, PO = 5.0 mW, FAHM2  
Rise Time, 10 to 90%  
–
35  
–
0.5  
0.5  
1000  
tf  
Fall Time, 90 to 10%  
ns  
–
–
Im  
ID  
Monitor Current, PO = 5.0 mW, VR = 5 V  
µA  
200  
600  
Monitor Dark Current,  
VR = 5 V  
VR = 5 V, TC = -40 to +85°C  
nA  
nA  
–
–
0.1  
–
10  
500  
Ct  
Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz  
pF  
dB  
–
6
–
20  
γ
Tracking Error3 Im = const, (@ PO = 5.0 mW, TC = 25°C)  
TC = -40 to +85°C  
-1.0  
1.0  
Notes:  
1. Applicable only to NX6306S Series.  
2. FAHM: Full Angle at Half Maximum.  
3. Tracking Error: γ  
P
O
(mW)  
P
5.0  
O
γ =  
|10 log  
|
[dB]  
T
C = 25°C  
5.0  
TC = -40 to +85°C  
P
O
I
m
0
Im  
(mA)  
California Eastern Laboratories  
123

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NX6306GJ-A NEC

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 		1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
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 		DFB Laser Diode Emitter, 1280nm Min, 1335nm Max, 622Mbps, Through Hole Mount, CAN PACKAGE-
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 		1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
NX6306SH-A NEC

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 		DFB Laser Diode Emitter, 1280nm Min, 1335nm Max, 156Mbps, Through Hole Mount, CAN PACKAGE-
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 		DFB Laser Diode Emitter, 1280nm Min, 1335nm Max, 622Mbps, Through Hole Mount, CAN PACKAGE-
NX6306SI-A NEC

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 		DFB Laser Diode Emitter, 1280nm Min, 1335nm Max, 622Mbps, Through Hole Mount, CAN PACKAGE-
NX6306SJ NEC

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 		DFB Laser Diode Emitter, 1280nm Min, 1335nm Max, 622Mbps, Through Hole Mount, CAN PACKAGE-

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