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NVTYS010N04CLTWG PDF预览

NVTYS010N04CLTWG

更新时间: 2023-09-03 20:32:34
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 326K
描述
MOSFET – Power, Single, N-Channel

NVTYS010N04CLTWG 数据手册

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MOSFET – Power, Single  
N-Channel  
40 V, 9.5 mW, 43 A  
NVTYS010N04CL  
Features  
www.onsemi.com  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Capacitance to Minimize Driver Losses  
AECQ101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
These Devices are PbFree and are RoHS Compliant  
9.5 mW @ 10 V  
40 V  
43 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
15.5 mW @ 4.5 V  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
NChannel  
D (5 8)  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
D
43  
A
C
q
JC  
T
C
30  
(Notes 1, 2, 3, 4)  
Steady  
State  
Power Dissipation  
T
C
P
D
32  
W
A
G (4)  
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
16  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
13  
S (1, 2, 3)  
q
JA  
T = 100°C  
A
9.4  
3.0  
1.5  
162  
(Notes 1, 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
D
W
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
A
p
LFPAK8  
3.3x3.3  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
CASE 760AD  
Source Current (Body Diode)  
I
26  
57  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 2.2 A)  
MARKING DIAGRAM  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
010N  
04CL  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
AWLYW  
010N04CL = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
4.8  
Unit  
WW  
= Work Week  
JunctiontoCase Steady State (Note 3)  
JunctiontoAmbient Steady State (Note 3)  
R
°C/W  
q
JC  
R
49.3  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD5112 for packages in which substantially  
less than 100% of the heat flows to single case surface.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
2
3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
April, 2021 Rev. 1  
NVTYS010N04CL/D  
 

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