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NVMFWS3D6N10MCLT1G

更新时间： 2023-09-03 20:35:46
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 403K
描述
Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ

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NVMFWS3D6N10MCLT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
3.6 mW @ 10 V  
5.8 mW @ 4.5 V  
100 V  
132 A  
100 V, 3.6 mW, 132 A  
NVMFS3D6N10MCL  
D (5,6)  
Features  
• Small Footprint (5x6 mm) for Compact Design  
G (4)  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
S (1,2,3)  
• NVMFWS3D6N10MCL − Wettable Flank Option for Enhanced  
Optical Inspection  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
20  
Unit  
V
DFN5 5x6, 1.27P (SO−8FL)  
V
DSS  
CASE 488AA  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current R  
T
= 25°C  
I
D
132  
A
C
Steady  
State  
q
JC  
T
C
= 100°C  
84  
(Notes 1, 3)  
Power Dissipation  
T
= 25°C  
P
139  
56  
W
A
C
D
D
Steady  
State  
R
(Note 1)  
q
JC  
T
C
= 100°C  
DFNW5 5x6 (FULL−CUT SO8FL WF)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
20  
Steady  
State  
CASE 507BA  
q
JA  
T = 100°C  
A
13  
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
3.2  
1.3  
888  
W
Steady  
State  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
MARKING DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
A
A
p
DM  
D
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
S
S
S
G
D
D
J
stg  
+175  
XXXXXX  
AYWZZ  
Source Current (Body Diode)  
IS  
116  
739  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
D
Energy (I = 9.2 A)  
AS  
XXXXXX = Specific Device Code  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
A
Y
= Assembly Location  
= Year  
(1/8″ from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
0.9  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
39  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
April, 2022 − Rev. 4  
NVMFS3D6N10MCL/D  
 
12345678

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