Datasheet > NVMJD7D4N04CLTWG

NVMJD7D4N04CLTWG

更新时间： 2023-09-03 20:32:36

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	248K
描述
Dual N−Channel Power MOSFET 40V, 52A, 7.4mΩ

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVMJD7D4N04CLTWG 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Dual

N-Channel

40 V, 7.6 mW, 51 A

MAX

I MAX

(BR)DSS

DS(ON)

7.6 mꢂ @ 10 V

40 V

51 A

12.6 mꢂ @ 4.5 V

NVMJD7D4N04CL

Features

• Small Footprint (5x6 mm) for Compact Design

Dual N−Channel

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

MARKING

DIAGRAM

D1 D1 D2 D2

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

7D4N04

AWLYW

ꢀ

(Notes 1, 2, 3)

Steady

State

LFPAK8

CASE 760AF

Power Dissipation

37.5

(Notes 1, 2)

ꢀ

= 100°C

S1 G1 S2 G2

Continuous Drain

Current R

T = 25°C

7D4N04CL = Specific Device Code

ꢀ

T = 100°C

(Notes 1, 2, 3)

= Assembly Location

= Wafer Lot

Steady

State

Power Dissipation

T = 25°C

3.2

1.6

197

= Year

(Notes 1, 2)

ꢀ

T = 100°C

= Work Week

Pulsed Drain Current

T = 25°C, t = 10 ꢁ s

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

+175

Source Current (Body Diode)

31.3

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, I

= 2.9 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ꢀ

47.3

ꢀ

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2022 − Rev. 1

NVMJD7D4N04CL/D

12 3 4 5 6

下载PDF

与NVMJD7D4N04CLTWG相关器件

型号	品牌	描述	获取价格	数据表
NVMJD8D1N04CTWG	ONSEMI	Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 m	获取价格
NVMJS0D8N04CLTWG	ONSEMI	功率 MOSFET，40V，0.83Ω，336 A，单 N 沟道	获取价格
NVMJS0D9N04CLTWG	ONSEMI	功率 MOSFET，40 V，0.82Ω，330 A，单 N 沟道	获取价格
NVMJS0D9N04CTWG	ONSEMI	Power MOSFET 40 V, 0.81mΩ, 322 A, Single N-Ch	获取价格
NVMJS1D0N04CTWG	ONSEMI	功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道	获取价格
NVMJS1D2N04CLTWG	ONSEMI	Power MOSFET 40 V, 1.2mΩ, 237 A, Single N-Cha	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMJD7D4N04CLTWG

NVMJD7D4N04CLTWG 数据手册

与NVMJD7D4N04CLTWG相关器件

与NVMJD7D4N04CLTWG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMJD7D4N04CLTWG

NVMJD7D4N04CLTWG 数据手册

与NVMJD7D4N04CLTWG相关器件

与NVMJD7D4N04CLTWG相关文章

您还可以找

您在本页遇到什么问题？