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NTMFS4841NT3G

更新时间： 2024-09-24 05:54:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 142K
描述
Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL

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中文翻译

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NTMFS4841NT3G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：DFN包装说明：5 X 6 MM, 1.27 MM PITCH, LEAD FREE, CASE 488AA-01, DFN6, SOP-8
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.36
雪崩能效等级（Eas）：180 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：8.3 A最大漏源导通电阻：0.0114 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：171 A
认证状态：Not Qualified表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTMFS4841NT3G 数据手册

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NTMFS4841N  
Power MOSFET  
30 V, 57 A, Single N−Channel, SO−8FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Devices*  
http://onsemi.com  
V
R
DS(ON)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
7.0 mW @ 10 V  
• Refer to Application Note AND8195/D  
• CPU Power Delivery  
• DC−DC Converters  
30 V  
57 A  
11.4 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D (5,6)  
Parameter  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
V
30  
20  
V
V
A
DSS  
V
GS  
G (4)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
13.1  
q
JA  
(Note 1) Steady  
State  
T = 85°C  
9.5  
A
S (1,2,3)  
N−CHANNEL MOSFET  
Power Dissipation  
T = 25°C  
A
P
2.17  
1.13  
19.9  
W
A
D
D
D
D
R
q
JA  
(Note 1)  
T = 85°C  
A
Continuous Drain  
Current R  
T = 25°C  
A
I
D
MARKING  
DIAGRAM  
−
q
JA  
T = 85°C  
A
14.4  
t = 10 sec  
D
Power Dissipation  
T = 25°C  
A
P
5
W
A
R
q
JA,  
t v 10 sec  
Steady  
State  
S
S
S
G
D
D
T = 85°C  
A
2.6  
8.3  
1
4841N  
AYWWG  
G
Continuous Drain  
Current R  
T = 25°C  
A
I
D
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
q
JA  
T = 85°C  
A
6
(Note 2)  
Power Dissipation  
(Note 2)  
D
T = 25°C  
A
P
I
0.87  
0.45  
57  
W
A
R
q
JA  
T = 85°C  
A
A
Y
= Assembly Location  
= Year  
Continuous Drain  
Current R  
T
= 25°C  
C
C
D
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
q
JC  
T
= 85°C  
41  
(Note 1)  
Power Dissipation  
(Note 1)  
T
T
= 25°C  
= 85°C  
P
41.7  
21.7  
171  
W
C
C
R
q
JC  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
A
ORDERING INFORMATION  
†
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
°C  
J
Device  
Package  
Shipping  
T
+150  
NTMFS4841NT1G  
SO−8FL  
(Pb−Free)  
1500 /  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
S
35  
6
A
Tape & Reel  
dV/dt  
EAS  
V/ns  
mJ  
NTMFS4841NT3G  
SO−8FL  
(Pb−Free)  
5000 /  
Single Pulse Drain−to−Source Avalanche  
Energy (V = 24 V, V = 10 V,  
180  
Tape & Reel  
DD  
GS  
I = 19 A , L = 1.0 mH, R = 25 W)  
L
pk  
G
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2010 − Rev. 7  
NTMFS4841N/D  
1234567

中文翻译

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NTMFS4841NT3G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFS4841NT1G ONSEMI

功能相似

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