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NTMFS4847NAT3G PDF预览

NTMFS4847NAT3G

更新时间： 2024-09-25 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 136K
描述
单 N 沟道，功率 MOSFET，30V，85A，4.1mΩ

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中文翻译

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NTMFS4847NAT3G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PDSO-F5针数：5
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.68外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：11.5 A最大漏源导通电阻：0.0062 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON

NTMFS4847NAT3G 数据手册

 浏览型号NTMFS4847NAT3G的Datasheet PDF文件第2页浏览型号NTMFS4847NAT3G的Datasheet PDF文件第3页浏览型号NTMFS4847NAT3G的Datasheet PDF文件第4页浏览型号NTMFS4847NAT3G的Datasheet PDF文件第5页浏览型号NTMFS4847NAT3G的Datasheet PDF文件第6页 
NTMFS4847N  
Power MOSFET  
30 V, 85 A, Single N−Channel, SO−8 FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Thermally Enhanced SO−8 Package  
http://onsemi.com  
• These are Pb−Free Device  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Applications  
4.1 mW @ 10 V  
6.2 mW @ 4.5 V  
• Refer to Application Note AND8195/D  
• CPU Power Delivery  
• DC−DC Converters  
30 V  
85 A  
• Low Side Switching  
D (5,6)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
V
30  
16  
18  
V
V
A
DSS  
G (4)  
V
GS  
Continuous Drain  
Current R  
T = 25°C  
I
D
A
q
JA  
S (1,2,3)  
N−CHANNEL MOSFET  
T = 85°C  
A
13  
(Note 1)  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
2.21  
W
A
D
D
D
D
R
q
JA  
Continuous Drain  
T = 25°C  
A
I
29.5  
21  
D
MARKING  
DIAGRAM  
Current R  
10 sec  
v
q
JA  
T = 85°C  
A
D
Power Dissipation  
T = 25°C  
A
P
5.8  
W
A
R
t v 10 sec  
S
S
S
G
D
D
q
JA,  
Steady  
State  
1
4847N  
AYWWG  
G
Continuous Drain  
Current R  
T = 25°C  
A
I
D
11.5  
8.2  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
q
JA  
T = 85°C  
A
(Note 2)  
Power Dissipation  
(Note 2)  
D
T = 25°C  
A
P
0.88  
W
A
R
q
JA  
A
Y
= Assembly Location  
= Year  
= Work Week  
Continuous Drain  
Current R  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
I
D
85  
61  
q
JC  
WW  
G
(Note 1)  
Power Dissipation  
(Note 1)  
= Pb−Free Package  
P
48.1  
W
A
(Note: Microdot may be in either location)  
R
q
JC  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
170  
100  
ORDERING INFORMATION  
Current limited by package  
T = 25°C  
A
I
A
Dmaxpkg  
†
Device  
Package  
Shipping  
Operating Junction and Storage  
Temperature  
T ,  
−55 to  
+150  
°C  
J
T
STG  
NTMFS4847NT1G  
SO−8FL  
1500 /  
(Pb−Free)  
Tape & Reel  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
48  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
NTMFS4847NT3G  
SO−8FL  
(Pb−Free)  
5000 /  
Tape & Reel  
Single Pulse Drain−to−Source Avalanche  
Energy (V = 50 V, V = 10 V,  
163  
DD  
GS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
I = 33 A , L = 0.3 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
March, 2009 − Rev. 1  
NTMFS4847N/D  
123456

中文翻译

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