Datasheet > NTHS5404

NTHS5404

更新时间： 2022-12-12 09:46:06

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	61K
描述
Power MOSFET

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NTHS5404 数据手册

NTHS5404

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Maximum Junction−to−Ambient (Note 2)

t v 5 sec

Steady State

°C/W

Maximum Junction−to−Foot (Drain)

Steady State

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

Gate−Body Leakage

= V , I = 250 mA

0.6

−

"100

1.0

GS(th)

= 0 V, V = "12 V

GSS

Zero Gate Voltage Drain Current

= 16 V, V = 0 V

−

DSS

= 16 V, V = 0 V,

−

5.0

T = 85°C

On−State Drain Current (Note 3)

w 5.0 V, V = 4.5 V

−

0.030

0.045

−

D(on)

Drain−Source On−State Resistance (Note 3)

= 4.5 V, I = 5.2 A

0.025

0.038

DS(on)

= 2.5 V, I = 4.3 A

−

Forward Transconductance (Note 3)

Diode Forward Voltage (Note 3)

= 10 V, I = 5.2 A

−

= 5.2 A, V = 0 V

−

0.8

1.2

Dynamic (Note 4)

Total Gate Charge

−

2.4

3.2

−

= 10 V, V = 4.5 V,

Gate−Source Charge

Gate−Drain Charge

Turn−On Delay Time

Rise Time

= 5.2 A

−

d(on)

= 10 V, R = 10 W

^ 1.0 A, V

= 4.5 V,

GEN

Turn−Off Delay Time

Fall Time

d(off)

= 6 W

Source−Drain Reverse Recovery Time

I = 1.1 A, di/dt = 100 A/ms

2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Guaranteed by design, not subject to production testing.

http://onsemi.com

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