NTHS5441T1

更新时间： 2024-02-26 08:44:13

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关
页数	文件大小	规格书
6页	67K
描述
−20 V, −5.3 A, P−Channel ChipFET

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中文翻译

获取价格

数据手册
替代型号

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NTHS5441T1 数据手册

NTHS5441

Power MOSFET

−20 V, −5.3 A, P−Channel ChipFET]

Features

• Low R

DS(on)

http://onsemi.com

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

TYP

I MAX

(BR)DSS

DS(on)

• Miniature ChipFET Surface Mount Package

• Pb−Free Package is Available

−20 V

46 mW @ −4.5 V

−5.3 A

Applications

• Power Management in Portable and Battery−Powered Products; i.e.,

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Steady

State

Rating

Drain−Source Voltage

Gate−Source Voltage

Continuous Drain Current

Symbol

5 sec

Unit

P−Channel MOSFET

−20

"12

ChipFET

CASE 1206A

STYLE 1

(T = 150°C) (Note 1)

−5.3

−3.8

−3.9

−2.8

T = 25°C

T = 85°C

Pulsed Drain Current

"20

Continuous Source Current

(Note 1)

−5.3

−3.9

CONNECTIONS

MARKING

DIAGRAM

Maximum Power Dissipation

(Note 1)

2.5

1.3

0.7

T = 25°C

T = 85°C

Operating Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

A3 = Specific Device Code

M = Month Code

= Pb−Free Package

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

[1 oz] including traces).

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

NTHS5441T1

ChipFET

3000/Tape & Reel

ChipFET

(Pb−Free)

NTHS5441T1G

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

July, 2005 − Rev. 13

NTHS5441T1/D

12 3 4 5 6

中文翻译

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NTHS5441T1 替代型号

型号	品牌	替代类型	描述	数据表
NTHS5441T1G	ONSEMI	类似代替	−20 V, −5.3 A, P−Channel ChipFET

与NTHS5441T1相关器件

型号	品牌	获取价格	描述	数据表
NTHS5441T1/D	ETC	获取价格	Power MOSFET P-Channel ChipFET
NTHS5441T1G	ONSEMI	获取价格	−20 V, −5.3 A, P−Channel ChipFET
NTHS5443	ONSEMI	获取价格	Power MOSFET
NTHS5443T1	ONSEMI	获取价格	Power MOSFET
NTHS5443T1	ROCHESTER	获取价格	3600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 1206A-03, CHIPFET-8
NTHS5443T1/D	ETC	获取价格	Power MOSFET P-Channel ChipFET?
NTHS5443T1G	ONSEMI	获取价格	Power MOSFET
NTHS5443T1G	ROCHESTER	获取价格	3600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8
NTHS5445T1	ONSEMI	获取价格	Power MOSFET P−Channel ChipFET-TM
NTHS5445T1/D	ETC	获取价格	Power MOSFET P-Channel ChipFET?

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