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NTE507

更新时间: 2024-10-29 07:13:47
品牌 Logo 应用领域
NTE 整流二极管
页数 文件大小 规格书
1页 21K
描述
Silicon Rectifier Diode

NTE507 技术参数

生命周期:Active包装说明:O-XALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:2.15
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.2 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

NTE507 数据手册

  
NTE507  
Silicon Rectifier Diode  
Description:  
The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies,  
inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes.  
This device has a typical recovery time of 150 nanoseconds providing high efficiency at frequencies  
to 250kHz.  
Absolute Maximum Ratings:  
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V  
RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V  
Average Rectified Forward Current (Single Phase, Resistive Load, TA = +75°C), IO . . . . . . . . 1.0A  
Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions), IFSM . . . . . . . . . 30A  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C  
Thermal Resistance, Junction–to–Ambient (Typical PC Board Mounting), RthJA . . . . . . . . 65°C/W  
Electrical Characteristics:  
Parameter  
Instantaneous Forward Voltage  
Forward Voltage  
Symbol  
VF  
Test Conditions  
IF = 3.14A, TJ = +150°C  
IF = 1A, TA = +25°C  
Min Typ Max Unit  
1.0  
1.0  
1.0  
50  
1.2  
1.2  
5.0  
V
V
VF  
Reverse Current  
IR  
VR = 50V, TA = +25°C  
VR = 50V, TA = +100°C  
µA  
100 µA  
Reverse Recovery Time  
trr  
IF = 1A to VR = 30V, IFM = 15A,  
di/dt = 10A/µs  
150 200  
ns  
Reverse Recovery Current  
IRM(REC) IF = 1A to VR = 30V  
1.0 2.0  
A
1.100  
(27.94)  
Min  
.210  
(5.33)  
Max  
.034 (0.87) Dia Max  
Color Band Denotes Cathode  
.107 (2.72)  
Dia Max  

NTE507 替代型号

型号 品牌 替代类型 描述 数据表
NTE178MP NTE

完全替代

Rectifier Diode, 1 Element, 0.07A, 50V V(RRM), Silicon,
DAN217UT106 ROHM

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