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NTE15019 PDF预览

NTE15019

更新时间: 2024-10-31 23:54:47
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NTE15019 数据手册

 浏览型号NTE15019的Datasheet PDF文件第2页 
NTE15012 & NTE15018 thru NTE15021  
Integrated Circuit  
TV Fixed Voltage Regulator  
Features:  
D Triple Diffused Darlington Transistor Chips Incorporated  
D Compact Plastic Package with Indistry Standard Reliability  
D Output Voltage is Pre–Fixed – No External Adjustment is Required  
Absolute Maximum Ratings:  
Peak Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  
Output Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A  
Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W  
Maximum Power Transistor Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Operating Temperature Range (TC), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +125°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +125°C  
Electrical Characteristics: (TA = +25°C unles otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
Output Voltage  
VOUT  
NTE15018  
NTE15021  
VAC = 100V, IIn = 6mA  
VAC = 120V, IIn = 7mA  
114  
115  
116  
V
122 123 124  
124 125 126  
129 130 131  
134 135 136  
V
NTE15020  
V
NTE15019  
V
V
NTE15012  
Load Regulation  
VLOAD IO = 250mA to 500mA  
±1  
V
Output Voltage Temperature  
Coefficient  
VIN = VAC, IO = 500mA,  
TC = –20° to +100°C  
7
mV/°C  
Input–Output Saturation Voltage VCE(sat) IC = 1A, IB = 0  
200  
1500  
1.0  
1.5  
V
V
Input–Output Voltage  
DC Current Gain  
VCEO ICEO = 10mA, IB = 0  
hFE  
IC = 1A, VCE = 4V  
6500  
Overload Capacity  
TS/B  
VCE = 100V, IC = 1A  
sec  
Power Transistor Thermal  
Resistance  
RthJC Between Junction and Stem  
Upper Surface  
1.25  
°C/W  
Input–Output Cutoff Current  
ICEO  
VCE = 200V, Open  
100  
µA  
(Between Pin1 & Pin2)  
Output–Base Reverse Current  
Capacity  
IEB(S/B) t = 65msec  
(Between Emitter–Base)  
300  
mA  
Note 1. Recommended Case Temperature: Topr(TC) = +100°C.  

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