NTE347
Silicon NPN Transistor
RF Power Output
PO = 3W @ 175MHz
Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in mili-
tary and industrial equipment operating to 240MHz.
Features:
D Low lead inductance stripline package for easier design and increased broadband capability.
D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed
to withstand an Open or Shorted Load at rated Output Power.
D Specified 13.6 volt, 175MHz Characteristics−
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6A
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
V
I = 200mA, I = 0
18
36
4.0
−
−
−
−
−
−
−
−
V
V
V
(BR)CEO
C
B
V
I = 200mA, I = 0
C B
(BR)CES
(BR)CBO
(BR)CBO
V
V
I = 1.0mA, I = 0
E C
V
CB
= 15V, I = 0
1.0 mA
E
ON CHARACTERISTICS
DC Current Gain
h
FE
I = 100mA, V = 5.0Vdc
5.0
−
−
−
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
ob
V
CB
= 15V, I = 0, f = 0.1 to 1.0 MHz
−
15
30
pF
E