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NTE112 PDF预览

NTE112

更新时间: 2024-02-25 23:47:39
品牌 Logo 应用领域
NTE 小信号肖特基二极管
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2页 22K
描述
Silicon Small Signal Schottky Diode

NTE112 数据手册

 浏览型号NTE112的Datasheet PDF文件第2页 
NTE112  
Silicon Small Signal Schottky Diode  
Description:  
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF  
mixers and ultrafast switching applications.  
Absolute Maximum Ratings:  
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA  
Surge Non–Repetitive Forward Current (tp 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°  
Thermal Resistance, Junction–to–Ambient (Note 1), Rth (j–a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W  
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL . . . . . . . . . . +230°C  
Note 1. On infinite heatsink with 4mm lead length.  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Static Characteristics  
Breakdown Voltage  
Forward Voltage Drop  
Reverse Current  
Symbol  
Test Conditions  
Min Typ Max Unit  
V(BR) IR = 100µA  
5
V
V
VF  
IR  
IF = 10mA, Note 2  
0.55  
VR = 1V, Note 2  
0.05 µA  
Dynamic Characteristics  
Capacitance  
C
QS  
F
VR = 0V, f = 1MHz  
IF = 10mA, Note 3  
f = 1GHz, Note 4  
6
1
3
7
pF  
pC  
dB  
Stored Charge  
Frequency  
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle < 2%.  
Note 3. Measured on a B–line Electronics QS–3 stored charge meter.  
Note 4. Noise Figure Test: – Diode is inserted in a tuned stripline circuit.  
Local oscillator frequency 1GHz  
Local oscillator power 1mW  
Intermediate frequency amplifier, tuned on 30MHz, has a noise  
figure, 1.5dB.  

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