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NTD4809NH

更新时间： 2024-11-18 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 82K
描述
Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK

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NTD4809NH 数据手册

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NTD4809NH  
Power MOSFET  
30 V, 58 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
9.0 mW @ 10 V  
14 mW @ 4.5 V  
30 V  
58 A  
• CPU Power Delivery  
• DC−DC Converters  
• Low Side Switching  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
N−Channel  
G
V
DSS  
V
"20  
11.5  
9.0  
V
GS  
S
Continuous Drain  
I
A
T = 25°C  
D
A
Current (R ) (Note 1)  
q
JA  
T = 85°C  
A
4
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
P
2.0  
W
A
A
D
4
q
JA  
Continuous Drain  
I
T = 25°C  
A
9.0  
7.0  
1.3  
D
2
Current (R ) (Note 2)  
1
q
JA  
T = 85°C  
A
1
2
3
IPAK  
Steady  
State  
3
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
W
A
D
3 IPAK  
CASE 369AD  
(Straight Lead)  
DPAK  
q
JA  
CASE 369C  
(Bent Lead)  
STYLE 2  
CASE 369D  
(Straight Lead  
DPAK)  
Continuous Drain  
T
T
T
= 25°C  
= 85°C  
= 25°C  
58  
45  
52  
D
C
C
C
Current (R  
(Note 1)  
)
q
JC  
Power Dissipation  
(R ) (Note 1)  
P
W
D
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
q
JC  
4
Pulsed Drain Current  
t =10ms T = 25°C  
I
DM  
130  
45  
A
A
p
A
4
Drain  
Drain  
4
Current Limited by Package  
T = 25°C  
A
I
DmaxPkg  
Drain  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
43  
6.0  
A
S
dV/dt  
V/ns  
mJ  
2
Single Pulse Drain−to−Source Avalanche  
E
112.5  
AS  
1
2
3
Drain  
1
3
Energy (V = 24 V, V = 10 V,  
DD  
GS  
Gate Drain Source  
Gate Source  
L = 1.0 mH, I  
= 15 A, R = 25 W)  
1
2
3
L(pk)  
G
Gate Drain Source  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Y
= Year  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
WW  
= Work Week  
4809NH= Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 1  
NTD4809NH/D  
12345678

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