Datasheet > NT6DM32M16BD-T1

NT6DM32M16BD-T1

更新时间： 2024-11-11 02:45:27

品牌	Logo	应用领域
南亚科技 - NANYA		动态存储器双倍数据速率
页数	文件大小	规格书
81页	4431K
描述
Commercial and Industrial Mobile DDR 512Mb SDRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NT6DM32M16BD-T1 数据手册

Nanya Technology Corp.

LPDDR 512Mb SDRAM

NT6DM32M16BD / NT6DM16M32BC

Commercial and Industrial Mobile DDR 512Mb SDRAM

Features

 Data Integrity

 JEDEC LPDDR Compliant

- Low Power Consumption

- DRAM built-in Temperature Sensor for

Temperature Compensated Self Refresh (TCSR)

- 2n Prefetch Architecture

- Auto Refresh and Self Refresh Modes

 Power Saving Mode

- Differential clock inputs (CK and )

- Double-data rate on DQs, DQS and DM

- Commands entered on each positive CK edge

- Deep Power Down Mode (DPD)

- Partial Array Self Refresh (PASR)

- Clock Stop capability during idle period

 LVCMOS Interface and Power Supply

- VDD/VDDQ=1.70 to 1.95V

- DQS edge-aligned with data for READs;

center-aligned with data for WRITEs

- Status Register Read (SRR)

 Signal Integrity

- Configurable DS for system compatibility

Options

Speed Grade (CL-TRCD-TRP) ¹

 Temperature Range (T_c)



- Commercial Grade = -25℃~85℃

- Industrial Grade = -40℃~85℃

- 333 Mbps / 3-3-3

- 400 Mbps / 3-3-3

Programmable Functions

 Burst Type (Sequential, Interleaved)

 Driver Strength (full, 1/2, 3/4, 1/4)



CAS Latency (2, 3)

Burst Length (2, 4, 8, 16)

Packages / Density Information

Density and Addressing

512Mb

Lead-free RoHS compliance and Halogen-free

Item

512Mb

Length x Width

(mm)

Ball pitch

(mm)

(Org / Package)

Addressing

Organization

Number of banks

Bank Address

Auto precharge

Row Address

Column Address

tRFC(ns) ²

Standard

Reduced Page Size

32M x 16 16M x 32

16M x 32

60-ball

32Mx16

8.00 x 9.00

0.80

BA0,BA1 BA0,BA1

BA0,BA1

A10/AP

A0-A13

A0-A7

110

VFBGA

A10/AP

A0-A12

A0-A9

110

A10/AP

A0-A12

A0-A8

110

90-ball

16Mx32

8.00 x 13.00

VFBGA

tREFI (µs) ³

7.8

Notes:

1. The timing specification of high speed bin is backward compatible with low speed bin.

2. Violating tRFC specification will induce malfunction.

3. tREFI values for all bank refresh is within temperature specification(<= 85℃).

Version 1.4

01/2016

NTC has the rights to change any specification or product without notification.

12 3 4 5 6 7...81

中文翻译

下载PDF

与NT6DM32M16BD-T1相关器件

型号	品牌	获取价格	描述	数据表
NT6DM32M16BD-T1I	NANYA	获取价格	Commercial and Industrial Mobile DDR 512Mb SDRAM
NT6DM32M16BD-T1NA	NANYA	获取价格	Commercial and Industrial Mobile DDR 512Mb SDRAM
NT6DM32M16BD-T3	NANYA	获取价格	Commercial and Industrial Mobile DDR 512Mb SDRAM
NT6DM32M16BD-T3I	NANYA	获取价格	Commercial and Industrial Mobile DDR 512Mb SDRAM
NT6DM32M16BD-T3NA	NANYA	获取价格	Commercial and Industrial Mobile DDR 512Mb SDRAM
NT6DM32M16BG-S1	NANYA	获取价格	Commercial Mobile DDR 1Gb SDRAM
NT6DM32M16BG-S2	NANYA	获取价格	Commercial Mobile DDR 1Gb SDRAM
NT6DM32M16BK-S1	NANYA	获取价格	Commercial Mobile DDR 1Gb SDRAM
NT6DM32M16CC-S1	NANYA	获取价格	Commercial Mobile DDR 1Gb SDRAM
NT6DM32M16CD-S1	NANYA	获取价格	Commercial Mobile DDR 1Gb SDRAM

与NT6DM32M16BD-T1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

24
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

24
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

50
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

40

产品中心

服务支持

精选活动

关于我们

帮助中心

NT6DM32M16BD-T1

NT6DM32M16BD-T1 数据手册

与NT6DM32M16BD-T1相关器件

与NT6DM32M16BD-T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NT6DM32M16BD-T1

NT6DM32M16BD-T1 数据手册

与NT6DM32M16BD-T1相关器件

与NT6DM32M16BD-T1相关文章

您还可以找

您在本页遇到什么问题？