Datasheet > NT5CC256M16EQ-FLI

NT5CC256M16EQ-FLI

更新时间： 2024-11-14 02:42:43

品牌	Logo	应用领域
南亚科技 - NANYA		动态存储器双倍数据速率
页数	文件大小	规格书
158页	4777K
描述
Commercial and Industrial DDR3(L) 4Gb SDRAM

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DDR3-4Gb E-Die

NT5CB(C)512M8EQ/NT5CB(C)256M16ER

Commercial and Industrial DDR3(L) 4Gb SDRAM

Features



Signal Integrity



Basis DDR3 Compliant

- Configurable DS for system compatibility

- Configurable On-Die Termination

- 8n Prefetch Architecture

- Differential Clock(CK/) and Data Strobe(DQS/)

- Double-data rate on DQs, DQS and DM

Data Integrity

- ZQ Calibration for DS/ODT impedance accuracy via

external ZQ pad (240 ohm ± 1%)



Signal Synchronization

- Write Leveling via MR settings ⁵

- Auto Self Refresh (ASR) by DRAM built-in TS

- Auto Refresh and Self Refresh Modes

Power Saving Mode

- Read Leveling via MPR

Interface and Power Supply

- Power Down Mode

- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)

- SSTL_135²for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)

Programmable Functions



CAS Latency (6/7/8/9/10/11/13/14)

CAS Write Latency (5/6/7/8/9/10)



Self RefreshTemperature Range(Normal/Extended)



Output Driver Impedance (34/40)

Additive Latency (0/CL-1/CL-2)

On-Die Termination of Rtt_Nom(20/30/40/60/120)

On-Die Termination of Rtt_WR(60/120)

Precharge Power Down (slow/fast)

Write Recovery Time (5/6/7/8/10/12/14/16)

Burst Type (Sequential/Interleaved)

Burst Length (BL8/BC4/BC4 or 8 on the fly)

Options

 Speed Grade (CL-TRCD-TRP) ¹

 Temperature Range (T_c) ^3,6

- 2133 Mbps / 14-14-14

- 1866 Mbps / 13-13-13

- 1600 Mbps / 11-11-11

- Commercial Grade : 0°C ~95°C

- Quasi Industrial Grade (-T) : -40°C ~95°C

- Industrial Grade (-I) : -40°C ~95°C

 Package Information

 Density and Addressing

Lead-free RoHS compliance and Halogen-free

Organization

512Mb x 8

256Mb x 16

TFBGA

Length x Width

(mm)

Ball pitch

(mm)

Bank Address

Auto precharge

BL switch on the fly

Row Address

BA0 – BA2

A10 / AP

A12 / 

A0 – A15

A0 – A9

1KB

BA0 – BA2

A10 / AP

A12 / 

A0 – A14

A0 – A9

2KB

Package

8.00 x 10.50

8.00 x 13.00

0.80

78-Ball

96-Ball

Column Address

Page Size

tREFI(us) ³

Tc<=85℃:7.8, Tc>85℃:3.9

260ns

tRFC(ns) ⁴

NOTE 1 Please refer to ordering information for the detail.

NOTE 2 1.35V DDR3L are backward compatible to 1.5V DDR3 parts. Please refer to operating frequency table

NOTE 3 If T_Cexceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9us interval refresh rate. Extended SRT or ASR must be enabled.

NOTE 4 Violating tRFC specification will induce malfunction.

NOTE 5 Only Support prime DQ’s feedback for each byte lane.

NOTE 6 When operate above 95°C,AC/DC will be derated.

Version 1.8

04/2019

NTC has the rights to change any specifications or product without notification.

12 3 4 5 6 7...158

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与NT5CC256M16EQ-FLI相关器件

型号	品牌	获取价格	描述	数据表
NT5CC256M16EQ-FLNA	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CC256M16EQ-FLT	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CC256M16ER-DI	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CC256M16ER-DIA	NANYA	获取价格	Automotive DDR3(L) 4Gb SDRAM
NT5CC256M16ER-DIB	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CC256M16ER-DIH	NANYA	获取价格	Automotive DDR3(L) 4Gb SDRAM
NT5CC256M16ER-DII	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CC256M16ER-DINA	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CC256M16ER-DIT	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM
NT5CC256M16ER-EK	NANYA	获取价格	Commercial and Industrial DDR3(L) 4Gb SDRAM

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