5秒后页面跳转
NT256D64S88ABG-6 PDF预览

NT256D64S88ABG-6

更新时间: 2024-01-22 22:38:27
品牌 Logo 应用领域
其他 - ETC 动态存储器双倍数据速率
页数 文件大小 规格书
15页 838K
描述
184pin One Bank Unbuffered DDR SDRAM MODULE

NT256D64S88ABG-6 数据手册

 浏览型号NT256D64S88ABG-6的Datasheet PDF文件第2页浏览型号NT256D64S88ABG-6的Datasheet PDF文件第3页浏览型号NT256D64S88ABG-6的Datasheet PDF文件第4页浏览型号NT256D64S88ABG-6的Datasheet PDF文件第5页浏览型号NT256D64S88ABG-6的Datasheet PDF文件第6页浏览型号NT256D64S88ABG-6的Datasheet PDF文件第7页 
NT256D64S88ABG  
256MB : 32M x 64  
PC2700 Unbuffered DIMM  
184pin One Bank Unbuffered DDR SDRAM MODULE Based on DDR333 32Mx8 SDRAM  
Features  
• 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module  
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM  
• DRAM DLL aligns DQ and DQS transitions with clock  
transitions.  
• Performance:  
• Address and control signals are fully synchronous to positive  
clock edge  
PC2700  
• Programmable Operation:  
- DIMM CAS Latency: 2, 2.5  
- Burst Type: Sequential or Interleave  
- Burst Length: 2, 4, 8  
- Operation: Burst Read and Write  
• Auto-Refresh (CBR) and Self-Refresh Modes  
• Automatic and controlled precharge commands  
• 13/10/1 Addressing (row/column/bank)  
• 7.8 µs Max. Average Periodic Refresh Interval  
• Serial Presence Detect  
Unit  
Speed Sort  
DIMM CAS Latency  
f CK Clock Frequency  
t CK Clock Cycle  
-6  
2.5  
166  
6
2
133  
7.5  
266  
MHz  
ns  
MHz  
f DQ DQ Burst Frequency  
333  
• Intended for 100 MHz and 133 MHz applications  
• Inputs and outputs are SSTL-2 compatible  
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2  
• SDRAMs have 4 internal banks for concurrent operation  
• Module has one physical bank  
• Gold contacts  
• SDRAMs in 66-pin TSOP Type II Package  
• Differential clock inputs  
• Data is read or written on both clock edges  
Description  
NT256D64S88ABG is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM),  
organized as a one-bank high-speed memory array. The 32Mx64 module is a single-bank DIMM that uses eight 32Mx8 DDR  
SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 333MHz. The DIMM is intended for use  
in applications operating from 133 MHz to 166 MHz clock speeds with data rates of 266 to 333 MHz. Clock enable CKE0 controls all  
devices on the DIMM.  
Prior to any access operation, the device CAS latency and burst type/ length/operation type must be programmed into the DIMM by  
address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.  
These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common  
design files minimizes electrical variation between suppliers.  
The DIMM uses serial presence detects implemented via a serial EEPROM using the two-pin IIC protocol. The first 128 bytes of serial PD  
data are programmed and locked during module assembly. The last 128 bytes are available to the customer.  
All NANYA 184 DDR SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.  
Ordering Information  
Part Number  
Speed  
166MHz (6ns @ CL = 2.5)  
133MHz (7.5ns @ CL= 2)  
Organization  
32Mx64  
Leads  
Gold  
Power  
2.5V  
NT256D64S88ABG-6  
PC2700  
REV 1.1  
1
08/2002  
© NANYA TECHNOLOGY CORP.  
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.  

与NT256D64S88ABG-6相关器件

型号 品牌 获取价格 描述 数据表
NT256D64S88B0G ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B0G-6K ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B0G-75B ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B1G ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B1G-5T ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B1GX ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B1GY ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B1GY-5T ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S88B1GY-6K ETC

获取价格

184 pin Unbuffered DDR DIMM
NT256D64S8HA0G ETC

获取价格

184pin Two Bank Unbuffered DDR SDRAM MODULE