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NSV1C200MZ4 PDF预览

NSV1C200MZ4

更新时间： 2024-09-28 12:19:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 110K
描述
100 V, 2.0 A, Low VCE(sat) PNP Transistor

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NSS1C200MZ4,  
NSV1C200MZ4  
100 V, 2.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
−100 VOLTS, 2.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
2,4  
2
cluster. The high current gain allows e PowerEdge devices to be  
1
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
BASE  
3
Features  
EMITTER  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
MARKING  
DIAGRAM  
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C)  
A
SOT−223  
CASE 318E  
STYLE 1  
AYW  
1C200G  
Rating  
Symbol  
Max  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CEO  
−100  
−140  
−7.0  
1.0  
Vdc  
Vdc  
Vdc  
A
1
V
CBO  
V
EBO  
A
Y
W
= Assembly Location  
= Year  
= Work Week  
Emitter-Base Voltage  
Base Current − Continuous  
Collector Current − Continuous  
Collector Current − Peak  
I
B
1C200 = Specific Device Code  
I
C
2.0  
A
G
= Pb−Free Package  
I
3.0  
A
CM  
THERMAL CHARACTERISTICS  
PIN ASSIGNMENT  
Characteristic  
Symbol  
Max  
Unit  
4
Total Device Dissipation  
P
D
(Note 1)  
C
T = 25°C  
Derate above 25°C  
800  
6.5  
mW  
mW/°C  
A
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
155  
°C/W  
q
JA  
B
C
E
3
1
2
Total Device Dissipation  
P (Note 2)  
D
T = 25°C  
Derate above 25°C  
2.0  
15.6  
W
mW/°C  
Top View Pinout  
A
ORDERING INFORMATION  
Thermal Resistance,  
R
(Note 2)  
64  
°C/W  
q
JA  
Junction−to−Ambient  
†
Device  
Package  
Shipping  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
NSS1C200MZ4T1G  
NSV1C200MZ4T1G  
SOT−223  
(Pb−Free)  
1000/  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSS1C200MZ4T3G  
SOT−223  
(Pb−Free)  
4000/  
Tape & Reel  
2
2
1. FR−4 @ 7.6 mm , 1 oz. copper traces.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR−4 @ 645 mm , 1 oz. copper traces.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
March, 2013− Rev. 5  
NSS1C200MZ4/D  
 
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