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NSV1C300ET4G PDF预览

NSV1C300ET4G

更新时间： 2023-06-19 14:32:05
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
6页 82K
描述
3 A，100 V 低 VCE(sat) PNP 晶体管

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中文翻译

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NSV1C300ET4G 技术参数

是否无铅： 不含铅生命周期：Active
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：2.1最大集电极电流 (IC)：3 A
配置：Single最小直流电流增益 (hFE)：120
JESD-609代码：e3湿度敏感等级：1
最高工作温度：150 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：33 W
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NSV1C300ET4G 数据手册

 浏览型号NSV1C300ET4G的Datasheet PDF文件第2页浏览型号NSV1C300ET4G的Datasheet PDF文件第3页浏览型号NSV1C300ET4G的Datasheet PDF文件第4页浏览型号NSV1C300ET4G的Datasheet PDF文件第5页浏览型号NSV1C300ET4G的Datasheet PDF文件第6页 
NSS1C300ET4G  
100 V, 3.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
CE(sat)  
www.onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
100 VOLTS, 3.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
COLLECTOR  
2, 4  
2
1
BASE  
Features  
3
EMITTER  
• Complement to NSS1C301ET4G  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
4
2
1
3
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
Unit  
Collector−Base Voltage  
V
V
140  
Vdc  
CBO  
MARKING DIAGRAM  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
100  
6.0  
3.0  
6.0  
0.5  
Vdc  
Vdc  
Adc  
Adc  
Adc  
CEO  
V
EB  
YWW  
1C30EG  
I
C
I
CM  
I
B
Y
= Year  
Total Power Dissipation  
P
D
D
WW  
1C30E  
G
= Work Week  
= Device Code  
= Pb−Free  
33  
0.26  
W
W/°C  
@ T = 25°C  
C
Derate above 25°C  
Total Power Dissipation (Note 1)  
P
2.1  
0.017  
W
W/°C  
@ T = 25°C  
A
Derate above 25°C  
ORDERING INFORMATION  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
†
Device  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
NSS1C300ET4G  
DPAK  
(Pb−Free)  
2500/  
Tape & Reel  
NSV1C300ET4G  
DPAK  
(Pb−Free)  
2500/  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
June, 2015 − Rev. 7  
NSS1C300E/D  
 
123456

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