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NSV20201DMTWTBG PDF预览

NSV20201DMTWTBG

更新时间： 2023-09-03 20:28:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 213K
描述
20 V, 2 A, Low VCE(sat) NPN Transistors

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NSV20201DMTWTBG 数据手册

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DATA SHEET  
www.onsemi.com  
Low VCE(sat) NPN Transistors  
20 V, 2 A  
20 Volt, 2 Amp  
NPN Low V Transistors  
CE(sat)  
MARKING  
DIAGRAM  
NSS20201DMT  
2
onsemi’s e PowerEdge family of low V  
transistors are  
CE(sat)  
1
2
3
6
5
4
WDFN6  
CASE 506AN  
miniature surface mount devices featuring ultra low saturation voltage  
XX MG  
G
(V ) and high current gain capability. These are designed for use  
CE(sat)  
1
in low voltage, high speed switching applications where affordable  
efficient energy control is important.  
XX = Specific Device Code  
M
= Date Code  
Typical applications are DC−DC converters and LED lightning,  
power management…etc. In the automotive industry they can be used  
in air bag deployment and in the instrument cluster. The high current  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
2
gain allows e PowerEdge devices to be driven directly from PMU’s  
control outputs, and the Linear Gain (Beta) makes them ideal  
components in analog amplifiers.  
PIN CONNECTIONS  
6
5
4
1
2
3
Features  
7
8
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
• NSV20201DMTWTBG − Wettable Flanks Device  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
6,7  
5
1
2
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Emitter Voltage  
Symbol  
Max  
20  
20  
7
Unit  
Vdc  
Vdc  
Vdc  
A
V
CEO  
V
CBO  
V
EBO  
Collector−Base Voltage  
Emitter−Base Voltage  
4
3,8  
Collector Current − Continuous  
Collector Current − Peak  
I
C
2
ORDERING INFORMATION  
I
3
A
CM  
†
Device  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NSS20201DMTTBG  
WDFN6  
(Pb−Free)  
3000 / Tape &  
Reel  
NSV20201DMTWTBG  
WDFN6  
(Pb−Free)  
3000 / Tape &  
Reel  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Thermal Resistance Junction−to−Ambient  
R
55  
°C/W  
q
JA  
(Notes 1 and 2)  
Total Power Dissipation per Package @  
T = 25°C (Note 2)  
A
P
2.27  
69  
W
°C/W  
W
D
Thermal Resistance Junction−to−Ambient  
(Note 3)  
R
q
JA  
Power Dissipation per Transistor @ T = 25°C  
P
1.8  
A
D
(Note 3)  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
2
1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Dual Operation).  
2. P per Transistor when both are turned on is one half of Total P or 1.13 Watts.  
D
D
2
3. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Single−Operation).  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2022 − Rev. 1  
NSS20201DMT/D  
 
1234567

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