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NSV20101JT1G PDF预览

NSV20101JT1G

更新时间： 2023-06-19 14:32:05
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管小信号双极晶体管
页数 文件大小 规格书
5页 110K
描述
20 V，1.0 A，低饱和压，NPN 双极晶体管

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中文翻译

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NSV20101JT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：5 weeks风险等级：5.75
最大集电极电流 (IC)：1 A集电极-发射极最大电压：20 V
配置：SINGLE最小直流电流增益 (hFE)：100
JESD-30 代码：R-PDSO-F3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.3 W
参考标准：AEC-Q101子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：350 MHzBase Number Matches：1

NSV20101JT1G 数据手册

 浏览型号NSV20101JT1G的Datasheet PDF文件第2页浏览型号NSV20101JT1G的Datasheet PDF文件第3页浏览型号NSV20101JT1G的Datasheet PDF文件第4页浏览型号NSV20101JT1G的Datasheet PDF文件第5页 
NSS20101J  
20 V, 1.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
20 VOLTS, 1.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
• This is a Pb−Free Device  
1
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
2
Rating  
Symbol  
Max  
20  
Unit  
Vdc  
Vdc  
Vdc  
A
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
40  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
6.0  
1.0  
2.0  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
3
I
A
CM  
Collector  
ESD  
HBM Class 3B  
MM Class C  
3
xx M G  
G
THERMAL CHARACTERISTICS  
Characteristic  
2
1
Symbol  
Max  
Unit  
SC−89  
CASE 463C  
2
1
Total Device Dissipation  
P
(Note 1)  
255  
mW  
D
Emitter  
Base  
T = 25°C  
A
Derate above 25°C  
2.0  
mW/°C  
°C/W  
xx = Specific Device Code  
Thermal Resistance,  
R
(Note 1)  
490  
q
JA  
Junction−to−Ambient  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Total Device Dissipation  
P
(Note 2)  
300  
mW  
D
T = 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
°C/W  
*Date Code orientation may vary depending  
upon manufacturing location.  
Thermal Resistance,  
R
(Note 2)  
415  
q
JA  
Junction−to−Ambient  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
NSS20101JT1G  
SC−89  
(Pb−Free)  
3000/Tape & Reel  
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
2
2. FR−4 @ 500 mm , 1 oz. copper traces.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
September, 2008 − Rev. 0  
NSS20101J/D  
 
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中文翻译

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NSV20101JT1G 替代型号

型号 品牌 替代类型 描述 数据表
SNSS20101JT1G ONSEMI

类似代替

 TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NSS20101JT1G ONSEMI

类似代替

 20 V, 1.0 A, Low VCE(sat) NPN Transistor

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