Datasheet > NSI1200C

NSI1200C

更新时间： 2024-04-09 18:59:50

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		隔离技术
页数	文件大小	规格书
25页	2721K
描述
NSI1200C是输出与输出基于NOVOSENSE电容隔离技术的隔离电流采样运放。此系列产品具有线性差分输入信号±250mV范围(满量程±320mV)。故障安全功能包括输入共模过压检测和VDD1缺

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NSI1200C 数据手册

NSI1200C

Datasheet (EN)1.0

Parameters

Symbol

Min

Typ

Max

Unit

Comments

VDD1 step to 3.0 V with VDD2 ≥ 3.0

V, to OUTP, OUTN valid, 0.1%

settling

Analog setting time

t_AS

0.5

(1) The typical value includes one standard deviation (sigma) range under typical operating conditions.

(2) The temperature drift is calculated with the whole temperature range (-40℃to 125℃).

(3) Nonlinearity is defined as half of the peak-peak value of the deviation between the measuring point and the fitting curve

divided by the full-scale range of the output voltage.

(4) THD is defined as the ratio of the sum of the rms value of first nine higher harmonics to the amplitude of the fundamental.

(5) Input referred.

6.2. Typical Performance Characteristics

Unless otherwise noted, test at VDD1 = 5V, VDD2 = 3.3V, INN=GND1=0V, INP = -250mV to 250mV, f_IN= 1kHz, BW = 10kHz.

2.88

0.12

2.87

0.1

0.08

0.06

0.04

0.02

2.86

2.85

2.84

2.83

2.82

2.81

2.8

IIBP(uA)

IIBN(uA)

-0.5

0.5

1.5

2.5

-40

-20

100

120

Templerature(℃)

Vcm(V)

Figure 6.1 Common-Mode Overvoltage Detection Level vs Temperature

Figure 6.3 Input Bias Current vs Common-Mode Voltage

0.3

-70

0.2

0.1

-75

-80

-85

-0.1

-90

Sample 1

Sample 2

Sample 3

-0.2

-0.3

-95

-100

-40

-20

100

120

-40

-20

100

120

Templerature(℃)

Figure 6.2 Input Offset Voltage vs Temperature

Figure 6.4 Common-Mode Rejection Ratio vs Temperature

Page 7

1...4 5 678 9 10...25

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