Datasheet > NSI1200C

NSI1200C

更新时间： 2024-04-09 18:59:50

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		隔离技术
页数	文件大小	规格书
25页	2721K
描述
NSI1200C是输出与输出基于NOVOSENSE电容隔离技术的隔离电流采样运放。此系列产品具有线性差分输入信号±250mV范围(满量程±320mV)。故障安全功能包括输入共模过压检测和VDD1缺

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSI1200C 数据手册

NSI1200C

Datasheet (EN)1.0

2. Absolute Maximum Ratings⁽¹⁾

Parameters

Power Supply Voltage⁽²⁾

Input Voltage

Symbol

VDD1, VDD2

INP, INN

OUTP, OUTN

I_in

Min

-0.3

Typ

Max

6.5

Unit

GND1-6

GND2-0.5

-10

VDD1+0.5

VDD2+0.5

Output Voltage

Input current per IO Pin

Junction Temperature

Storage Temperature

℃

T_J

-40

150

T_STG

-55

150

(1) The device cannot operate beyond the listed Absolute Maximum Ratings to prevent permanent device damage. The device is

not fully functional if operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings. Long-

time stress of the absolute maximum conditions may affect the device lifetime.

(2) VDD1 to GND1, VDD2 to GND2

3. ESD Ratings⁽¹⁾

Parameters

Test condition

Value

±4000

±1000

Unit

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽²⁾

Charged device model (CDM), per JEDEC specification JESD22-C101⁽³⁾

Electrostatic discharge

(ESD)

(1) Though this device features proprietary protection circuitry, proper ESD precautions should be considered to avoid

performance degradation of damage due to high energy ESD event. Charged devices and circuit boards may discharge without

detection.

(2) Safe manufacturing requires 500-V HBM and standard ESD precautions, per JEDEC document JEP155.

(3) Safe manufacturing requires 250-V CDM and standard ESD precautions, per JEDEC document JEP157.

4. Recommended Operating Conditions

Parameters

Symbol

VDD1

VDD2

V_Clipping

V_FSR

Min

3.0

Typ

5.0

Max

5.5

Unit

Side1 Power Supply

Side2 Power Supply

3.3

5.5

Differential input voltage before clipping output

Linear differential input full scale voltage

Operating common-mode input voltage

Operating Ambient Temperature

±320

-250

-0.16

-40

250

2.6

V_CM

T_A

125

℃

Page 4

1 2 345 6 7...25

中文翻译

下载PDF

与NSI1200C相关器件

型号	品牌	描述	获取价格	数据表
NSI1300D05	NOVOSENSE	NSI1300是输出与输出基于NOVOSENSE电容隔离技术的隔离电流采样运放。此系列产品	获取价格
NSI1300D25	NOVOSENSE	NSI1300是输出与输出基于NOVOSENSE电容隔离技术的隔离电流采样运放。此系列产品	获取价格
NSI1300D25-Q1	NOVOSENSE	NSI1300-Q1是输出与输出基于NOVOSENSE电容隔离技术的隔离电流采样运放。此系	获取价格
NSI1303M02	NOVOSENSE	NSI1303M02是一款高性能Σ-Δ调制器，基于NOVOSENSE电容隔离技术，其输出与	获取价格
NSI1303M21	NOVOSENSE	NSI1303M21是一款高性能Σ-Δ调制器，基于NOVOSENSE电容隔离技术，其输出与	获取价格
NSI1305M05	NOVOSENSE	NSI1305是一款高性能Σ-Δ调制器，基于NOVOSENSE电容隔离技术，其输出与输入分	获取价格