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NRVB10100MFST1G PDF预览

NRVB10100MFST1G

更新时间: 2024-01-04 10:33:42
品牌 Logo 应用领域
安森美 - ONSEMI 功效瞄准线光电二极管
页数 文件大小 规格书
4页 68K
描述
SWITCHMODE Power Rectifiers

NRVB10100MFST1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SO-8FL, DFN5, 6 PINReach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:5 weeks
风险等级:1.48Samacsys Description:Schottky Diodes & Rectifiers 10 A, 100 V SCHOTTKY DIOD
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:5
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向电流:100 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NRVB10100MFST1G 数据手册

 浏览型号NRVB10100MFST1G的Datasheet PDF文件第2页浏览型号NRVB10100MFST1G的Datasheet PDF文件第3页浏览型号NRVB10100MFST1G的Datasheet PDF文件第4页 
MBR10100MFS,  
NRVB10100MFS  
SWITCHMODE  
Power Rectifiers  
Features  
Low Power Loss / High Efficiency  
http://onsemi.com  
New Package Provides Capability of Inspection and Probe After  
Board Mounting  
SCHOTTKY BARRIER  
RECTIFIERS  
Guardring for Stress Protection  
Low Forward Voltage Drop  
175°C Operating Junction Temperature  
Wettable Flacks Option Available  
10 AMPERES  
100 VOLTS  
NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
5,6  
1,2,3  
These are Pb−Free Devices  
MARKING  
DIAGRAM  
Mechanical Characteristics:  
A
C
C
Case: Epoxy, Molded  
1
B10100  
AYWZZ  
A
A
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
Lead Finish: 100% Matte Sn (Tin)  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Not Used  
B10100 = Specific Device Code  
A
Y
W
ZZ  
= Assembly Location  
= Year  
Device Meets MSL 1 Requirements  
MAXIMUM RATINGS  
= Work Week  
= Lot Traceability  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
V
100  
10  
R
ORDERING INFORMATION  
Average Rectified Forward Current  
I
A
A
F(AV)  
Device  
Package  
Shipping†  
1500 /  
(Rated V , T = 165°C)  
R
C
Peak Repetitive Forward Current,  
I
20  
MBR10100MFST1G  
SO−8 FL  
FRM  
(Rated V , Square Wave,  
(Pb−Free) Tape & Reel  
R
20 kHz, T = 163°C)  
C
MBR10100MFST3G  
NRVB10100MFST1G  
SO−8 FL 5000 /  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
150  
A
FSM  
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
Storage Temperature Range  
T
−65 to +175  
−55 to +175  
75  
°C  
°C  
mJ  
NRVB10100MFST3G  
stg  
Operating Junction Temperature  
T
J
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Non−repetitive)  
E
AS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
M4  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NOTE: The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dPD/dTJ < 1/RJA.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
October, 2013 − Rev. 0  
MBR10100MFS/D  

NRVB10100MFST1G 替代型号

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NRVB10100MFST3G ONSEMI

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