Datasheet > NR8501FR-BB-A

NR8501FR-BB-A

更新时间： 2024-11-03 09:11:51

品牌	Logo	应用领域
瑞萨 - RENESAS		局域网
页数	文件大小	规格书
6页	202K
描述
AVALANCHE-TYPE PHOTODIODE,800MA/W RESPONSIVITY,CANCVAR

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NR8501FR-BB-A 数据手册

NEC's φ50 µm InGaAs APD

IN COAXIAL PACKAGE

NR8501 Series

FOR 2.5Gb/s APPLICATIONS

FEATURES

DESCRIPTION

NEC's NR8501 Series are InGaAs avalanche photo diode

(APD) coaxial modules with optical fiber pigtail. They are

designed for long wavelength 2.5 Gb/s optical communication

systems and are ideal as a reciever for Synchronous Digital

Hierarchy (SDH) system, STM-16 ITU-T recommendations.

• SMALL DARK CURRENT:

I^D= 7 nA

• HIGH SENSITIVITY:

S = 0.94 A/W at λ = 1310 nm, M = 1

S = 0.96 A/W at λ = 1550 nm, M = 1

• HIGH SPEED RESPONSE:

fC = 2.5 GHz at M = 5

• COAXIAL MODULE WITH SINGLE MODE FIBER (SMF)

or GI-50 Fiber

• WITH SC CONNECTOR: Standard, FC connector: Option

(Refer to Ordering Information)

ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, Unless otherwise specified)

PART NUMBER

NR8501 Series

SYMBOLS

PARAMETERS AND CONDITIONS

Reverse Breakdown Voltage, ID =100 µA

Temperature Coefficient of Reverse Breakdown Voltage

Dark Current, VR = VBR x 0.9

UNITS

MIN

TYP

MAX

VBR

δ¹

%/ºC

0.20

IDM

Multiplied Dark Current, M = 2 to 10

Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz

0.5

0.75

Cut-off Frequency, M = 5

GHz

2.5

1.0

3.0

1.2

M = 10

M = 30

Sensitivity,

λ = 1310 nm, M = 1

λ = 1550 nm, M = 1

A/W

0.80

0.81

0.94

0.96

Multiplication Factor, λ = 1310 nm, IPO = 1.0 µA

VR = V (@ID = 1 µA)

Excess Noise Factor², λ = 1310 nm, 1550 nm,

IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz

0.7

Excess Noise Factor², λ = 1310 nm, 1550 nm,

IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz

ORL

Notes:

Optical Return Loss

SMF

GI-50 Fiber

VBR(25°C+∆T°C)-VBR(25°C)

1. δ =

2. F = M^X

∆T°C • V^BR(25°C)

California Eastern Laboratories

12 3 4 5 6

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