Datasheet > NR6300EZ

NR6300EZ

更新时间： 2024-01-28 11:13:41

品牌	Logo	应用领域
日电电子 - NEC		局域网光电半导体
页数	文件大小	规格书
7页	60K
描述
Avalanche Photodiode, CAN PACKAGE-3

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NR6300EZ 技术参数

DATA SHEET

PHOTO DIODE

NR6300EZ

φ 30 μm InGaAs AVALANCHE PHOTO DIODE

FOR OTDR APPLICATIONS

DESCRIPTION

The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems.

FEATURES

•

Small dark current

ID = 5 nA

Small terminal capacitance

High sensitivity

C^t= 0.35 pF @ 0.9 V(BR)R

S = 0.94 A/W @ λ = 1 310 nm, M = 1

fC = 2.5 GHz MIN. @ λ = 1 310 nm, M = 10

φ 30 μm

High speed response

Detecting area size

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PL10701EJ01V0DS (1st edition)

Date Published January 2008 NS

Printed in Japan

2008

12 3 4 5 6 7

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