生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | TO-263, MP-25ZJ, 3 PIN | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.76 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.02 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
最大脉冲漏极电流 (IDM): | 210 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP80N06ELD | RENESAS |
获取价格 |
80A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN | |
NP80N06MLG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N06MLG_15 | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N06MLG-S18-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N06MLG-S18-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N06NLG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N06NLG-S18-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N06NLG-S18-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N06PLG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N06PLG-E1B-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |