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NP160N04TUG PDF预览

NP160N04TUG

更新时间: 2024-02-17 21:19:44
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 281K
描述
SWITCHING N-CHANNEL POWER MOS FET

NP160N04TUG 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended零件包装代码:TO-263
包装说明:SMALL OUTLINE, R-PSSO-G6针数:7
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.26
雪崩能效等级(Eas):372 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):160 A最大漏源导通电阻:0.002 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G6
JESD-609代码:e0元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):640 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NP160N04TUG 数据手册

 浏览型号NP160N04TUG的Datasheet PDF文件第2页浏览型号NP160N04TUG的Datasheet PDF文件第3页浏览型号NP160N04TUG的Datasheet PDF文件第4页浏览型号NP160N04TUG的Datasheet PDF文件第5页浏览型号NP160N04TUG的Datasheet PDF文件第7页浏览型号NP160N04TUG的Datasheet PDF文件第8页 
NP160N04TUG  
PACKAGE DRAWING (Unit: mm)  
TO-263-7pin (MP-25ZT)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Source  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
6
Data Sheet D18754EJ1V0DS  

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