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NP15P06SLG-E1-AY PDF预览

NP15P06SLG-E1-AY

更新时间: 2024-01-02 10:04:00
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲晶体管
页数 文件大小 规格书
7页 194K
描述
Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 PIN

NP15P06SLG-E1-AY 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.32雪崩能效等级(Eas):19 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):15 A
最大漏源导通电阻:0.095 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NP15P06SLG-E1-AY 数据手册

 浏览型号NP15P06SLG-E1-AY的Datasheet PDF文件第1页浏览型号NP15P06SLG-E1-AY的Datasheet PDF文件第2页浏览型号NP15P06SLG-E1-AY的Datasheet PDF文件第3页浏览型号NP15P06SLG-E1-AY的Datasheet PDF文件第4页浏览型号NP15P06SLG-E1-AY的Datasheet PDF文件第6页浏览型号NP15P06SLG-E1-AY的Datasheet PDF文件第7页 
NP15P06SLG  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
10000  
160  
140  
120  
100  
80  
C
iss  
V
GS = 4.5 V  
1000  
100  
10  
C
oss  
10 V  
60  
40  
C
rss  
I
D
= 7.5 A  
V
GS = 0 V  
20  
Pulsed  
f = 1 MHz  
0
-75  
-25  
25  
75  
125  
175  
225  
-0.1  
-1  
-10  
-100  
Tch - Channel Temperature - °C  
VDS - Drain to Source Voltage - V  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
-60  
1000  
100  
10  
-12  
-10  
-8  
V
V
DD = 30 V  
GS = 10 V  
-50  
V
DD  
= 48 V  
t
d(off)  
R = 0 Ω  
G
30 V  
-40  
-30  
-20  
-10  
0
12 V  
t
f
-6  
V
GS  
t
d(on)  
-4  
t
r
-2  
V
DS  
D
I = 15 A  
1
0
-0.1  
-1  
-10  
-100  
0
10  
20  
30  
ID - Drain Current - A  
QG - Gate Charge - nC  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
-100  
1000  
100  
10  
V
GS  
= 10 V  
-10  
-1  
0 V  
-0.1  
-0.01  
di/dt =  
100 A/ s  
− μ  
Pulsed  
V
GS = 0 V  
1
0
0.5  
1
1.5  
-0.1  
-1  
-10  
-100  
VF(S-D) - Source to Drain Voltage - V  
IF - Diode Forward Current - A  
5
Data Sheet D19078EJ2V0DS  

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