Datasheet > NP100N04MDH-S18-AY

NP100N04MDH-S18-AY

更新时间： 2024-02-20 19:30:24

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	355K
描述
POWER, FET

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技术参数
数据手册

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NP100N04MDH-S18-AY 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

NP100N04MDH-S18-AY 数据手册

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NP100N04MDH, NP100N04NDH, NP100N04PDH

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

CHANNEL TEMPERATURE

100000

10000

1000

iss

^GS= 4.5 V

oss

rss

10 V

^GS= 0 V

I = 50 A

Pulsed

f = 1 MHz

100

-75

-25

125

175

225

0.01

0.1

100

VDS - Drain to Source Voltage - V

T^ch- Channel Temperature - °C

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

100

^DD= 32 V

20 V

8 V

d(off

d(on)

^DD= 20 V

V^GS= 10 V

= 0 Ω

I = 100 A

0.1

100

20 40 60 80 100 120 140 160 180

I^D- Drain Current - A

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

1000

100

1000

100

GS = 10 V

4.5 V

0 V

di/dt = 100 A/

^GS= 0 V

Pulsed

1.5

0.1

0.5

0.1

100

V^F(S-D)- Source to Drain Voltage - V

I^F- Diode Forward Current - A

Data Sheet D18806EJ3V0DS

1...5 6 789 10 11

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