Datasheet > NP100N04MDH-S18-AY

NP100N04MDH-S18-AY

更新时间： 2024-02-20 13:55:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	355K
描述
POWER, FET

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技术参数
数据手册

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NP100N04MDH-S18-AY 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

NP100N04MDH-S18-AY 数据手册

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NP100N04MDH, NP100N04NDH, NP100N04PDH

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE

500

400

300

200

100

1000

100

^GS= 10 V

4.5 V

ch = 200°C

175°C

150°C

75°C

25°C

−55°C

0.1

0.01

0.001

V^DS= 10 V

Pulsed

V^DS- Drain to Source Voltage - V

V^GS- Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

1000

100

VDS = VGS

^ch= −55°C

2.5

25°C

75°C

150°C

= 10 mA

1.5

250 μA

175°C

200°C

0.1

0.5

^DS= 10 V

Pulsed

0.01

-75

-25

125

175

225

0.01

0.1

100

T^ch- Channel Temperature - °C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

Pulsed

^GS= 4.5 V

10 V

I = 50 A

Pulsed

100

1000

V^GS- Gate to Source Voltage - V

ID - Drain Current - A

Data Sheet D18806EJ3V0DS

1...4 5 678 9 10 11

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