Datasheet > NP100N04MDH-S18-AY

NP100N04MDH-S18-AY

更新时间： 2024-02-25 09:08:40

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	355K
描述
POWER, FET

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技术参数
数据手册

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NP100N04MDH-S18-AY 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

NP100N04MDH-S18-AY 数据手册

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NP100N04MDH, NP100N04NDH, NP100N04PDH

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) (T^C= 25°C) ^Note1

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

100

400

288

°C

PT2

1.8

Tch1

T^ch2

T^stg

175

Channel Temperature ^Note2

200

Storage Temperature

−55 to +175

Repetitive Avalanche Current ^Note3

Repetitive Avalanche Current ^Note4

Repetitive Avalanche Energy ^Note5

I^AR1

I^AR2

E^AR

1000

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Reliability test condition

High temperature bias condition (V^DS= VDSS, VGS = 0 V, 250 Hr)

High temperature gate bias condition (V^DS= 0 V, VGS = 12 V, 250 Hr)

3. L = 100 μH, Tch ≤ 200°C

<R>

4. L = 10 μH, Tch ≤ 200°C

5. T^ch≤ 200°C, RG = 25 Ω, VGS = 12 → 0 V

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

Rth(ch-C)

0.52

83.3

°C/W

R^th(ch-A)

Data Sheet D18806EJ3V0DS

1 2 345 6 7...11

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