Datasheet > NP100N04MDH-S18-AY

NP100N04MDH-S18-AY

更新时间： 2024-02-08 07:55:28

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	355K
描述
POWER, FET

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NP100N04MDH-S18-AY 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

NP100N04MDH-S18-AY 数据手册

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP100N04MDH, NP100N04NDH, NP100N04PDH

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for

high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

Pure Sn (Tin)

PACKING

PACKAGE

NP100N04MDH-S18-AY ^Note

NP100N04NDH-S18-AY ^Note

NP100N04PDH-E1-AY ^Note

NP100N04PDH-E2-AY ^Note

Tube

TO-220 (MP-25K) typ. 1.9 g

TO-262 (MP-25SK) typ. 1.8 g

50 p/tube

Tape

TO-263 (MP-25ZP) typ. 1.5 g

800 p/reel

Note Pb-free (This product does not contain Pb in the external electrode.)

(TO-220)

FEATURES

• Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)

• Super low on-state resistance

- NP100N04MDH, NP100N04NDH

R^DS(on)1= 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)

R^DS(on)2= 4.7 mΩ MAX. (VGS = 4.5 V, ID = 50 A)

- NP100N04PDH

R^DS(on)1= 2.9 mΩ MAX. (VGS = 10 V, ID = 50 A)

R^DS(on)2= 4.3 mΩ MAX. (VGS = 4.5 V, ID = 50 A)

• High avalanche energy, High avalanche current

• Logic level drive Type

(TO-262)

• Low input capacitance

C^iss= 8700 pF TYP. (VDS = 25 V)

(TO-263)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18806EJ3V0DS00 (3rd edition)

Date Published December 2007 NS

Printed in Japan

2007

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

1 234 5 6 7...11

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