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NM93CS56LZM8 PDF预览

NM93CS56LZM8

更新时间: 2024-11-12 20:17:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
14页 124K
描述
EEPROM, 128X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8

NM93CS56LZM8 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.82其他特性:DATA RETENTION=40 YEARS
最大时钟频率 (fCLK):0.25 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128X16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.001 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):15 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

NM93CS56LZM8 数据手册

 浏览型号NM93CS56LZM8的Datasheet PDF文件第2页浏览型号NM93CS56LZM8的Datasheet PDF文件第3页浏览型号NM93CS56LZM8的Datasheet PDF文件第4页浏览型号NM93CS56LZM8的Datasheet PDF文件第5页浏览型号NM93CS56LZM8的Datasheet PDF文件第6页浏览型号NM93CS56LZM8的Datasheet PDF文件第7页 
March 1997  
NM93CS06LZ/CS46LZ/CS56LZ/CS66LZ  
256-/1024-/2048-/4096-Bit Serial EEPROM with Extended  
Voltage (2.7V to 5.5V) and Data Protect (MICROWIRE  
Bus Interface)  
and 5 which operate on the Protect Register. The memory in-  
structions are READ, WRITE, WRITE ALL, WRITE EN-  
ABLE, and WRITE DISABLE. The Protect register instruc-  
tions are PRREAD, PRWRITE, PRCLEAR, PRDISABLE and  
PRENABLE.  
General Description  
The NM93CS06LZ/CS46LZ/CS56LZ/CS66LZ devices are  
256/1024/2048/4096 bits, respectively, of non-volatile elec-  
trically erasable memory divided into 16/64/128/256 x 16-bit  
registers (addresses). The NM93CSxxLZ Family functions in  
an extended voltage operating range and is fabricated using  
Fairchild Semiconductor’s floating gate CMOS technology  
for high reliability, high endurance and low power consump-  
tion. N registers (N16, N64, N128, N256) can be pro-  
tected against data modification by programming the Protect  
Register with the address of the first register to be protected  
against data modification. (All registers greater than, or  
equal to, the selected address are then protected from fur-  
ther change.) Additionally, this address can be “locked” into  
the device, making all future attempts to change data impos-  
sible.  
Features  
n 2.7V to 5.5V operation in all modes  
n Less than 1.0 µA standby current  
n Sequential register read  
n Write protection in a user-defined section of memory  
n Typical active current of 200 µA  
n Direct write: no erase before program  
n Reliable CMOS floating gate technology  
n MICROWIRE compatible serial I/O  
n Self-timed programming cycle  
These devices are available in both SO and TSSOP pack-  
ages for small space considerations.  
n Device status indication during programming mode  
n 40 years data retention  
n Endurance: 106 changes  
The serial interface that control these EEPROMs is MI-  
CROWIRE compatible, providing simple interfacing to stan-  
dard microcontrollers and microprocessors. There are a total  
of 10 instructions, 5 which operate on the EEPROM memory  
n Packages available: 8-pin SO, 8-pin DIP, 8-Pin TSSOP  
Block Diagram  
DS011807-1  
© 1997 Fairchild Semiconductor Corporation  
DS011807  
www.fairchildsemi.com  
1
PrintDate=1997/08/29 PrintTime=12:23:19 10402 ds011807 Rev. No. 5 cmserv Proof  
1

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