Datasheet > NJG1119

NJG1119

更新时间： 2024-09-25 10:06:43

品牌	Logo	应用领域
NJRC		射频微波
页数	文件大小	规格书
1页	142K
描述
Wide Band Medium Power Amplifier, 2.0 X 2.0 MM, 0.65 MM HEIGHT, ULTRA SMALL, FFP12-B4, 12 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NJG1119 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.92	构造：	COMPONENT
JESD-609代码：	e4	射频/微波设备类型：	WIDE BAND MEDIUM POWER
端子面层：	Gold (Au) - with Nickel (Ni) barrier	Base Number Matches：	1

NJG1119 数据手册

NJRC’s GaAs MMIC W-CDMA Dual

LNAs

NJR

NEWS

2006

March 6, 2006

NJG1119 & NJG1122

NJG1119 & NJG1122 GaAs MMIC Dual LNAs

NJRC is a leader in GaAs MMIC technology.

General Description

Features

¾ Low voltage operation: +2.7V typ.

¾ High gain mode:

Both the NJG1119 and NJG1122 are Dual band

LNA ICs designed for W-CDMA cellular phone of

2.1GHz and 800MHz band. These ICs have an

LNA pass-through function to select high or low

gain mode. An ultra small and ultra thin package

of FFP12–B4 is adopted. They are a mirror-

reversed version of the NJG1121.

• High gain 14.5 dB typ. @ f_RF=2140MHz & 16.0 dB typ. @ f_RF=885MHz

• Low noise figure 1.7dB typ. @ f_RF= 240MHz & 1.45dB typ. @ f_RF=885MHz

• High Input IP3 –3.5dBmtyp. @f_RF=2140.0+2140.1MHz/885.0+885.1MHz

¾ Low gain mode:

• Gain -4.0dB typ. @f_RF=2140MHz & -4.5dB typ. @ f_RF=885MHz

• Noise figure 4.0dB typ. @f_RF=2140MHz & 4.5dB typ. @ f_RF=885MHz

• Input IP3 2.5dBmtyp. @f_RF=2140.0+2140.1MHz & 2.0dBm typ.

@f_RF=885.0+885.1MHz

Pin Configuration

Pin Connection

1. GND

¾Ultra small & ultra thin package:

FFP12-B4

(Package size: 2.0x2.0x0.65mm)

2. VCTL2

3. EXTCAP

Typical Application

4. RFOUT1 (800MHz)

5. GND

Tx, 800MHz

6. RFOUT2 (2.1GHz)

7. GND

800M/1.7G/2GHz

1.7G/2GHz

800MHz

Tx, 2GHz

TX, 1.7GHz

8. VCTL1

Triple LNA

9. VINV

Triple LNA

NJG1123*(NJG1125 *)

10. RFIN2 (2.1GHz)

11. GND

Truth Table

Rx, 1.7GHz

12. RFIN1 (800MHz)

“H”=V_CTL(H), “L”=V_CTL(L)

Rx, 2GHz

3P4T SW

Rx, 800MHz

EXT

NJG16xx**

Single LNA Dual LNA

* Under Development

** Planning

NJG1116B

NJG1119 / 1122

NJG1116B NJG1119 / 1122

NJR CORPORATION offers Bipolar ICs, CMOS ICs, BiCMOS ICs and GaAs MMICs

as well as Saw filters and Microwave Doppler Modules, covering North and South

America to provide technical assistance and quick delivery for achieving customer

satisfactions. For further information, please contact:

NJR CORPORATION

A SUBSIDARY OF NEW JAPAN RADIO COMPANY, LTD.

198 Stauffer Blvd. San Jose, CA 95125

PHONE : (408) - 995-6200, (866) NJR-CORP or WWW.NJR.COM

The World’s Best Source for High Quality ICs using Bipolar, CMOS, BiCMOS, GaAs MMICs, as well as Saw filters & Microwave Sensors

中文翻译

下载PDF

与NJG1119相关器件

型号	品牌	获取价格	描述	数据表
NJG1119PB4	NJRC	获取价格	Wide Band Medium Power Amplifier, 2 X 2 MM, 0.65 MM HEIGHT, ULTRA SMALL, FFP12-B4, 12 PIN
NJG1122	NJRC	获取价格	Wide Band Medium Power Amplifier, 2.0 X 2.0 MM, 0.65 MM HEIGHT, ULTRA SMALL, FFP12-B4, 12
NJG1122PB4	NJRC	获取价格	Wide Band Medium Power Amplifier, 2 Func, GAAS, 2 X 2 MM, 0.65 MM HEIGHT, ULTRA SMALL, FFP
NJG1123PB5	NJRC	获取价格	RF and Baseband Circuit, 2 X 2 MM, 0.65 MM HEIGHT, FFP-16
NJG1125PB5	NJRC	获取价格	RF and Baseband Circuit, 2 X 2 MM, 0.65 MM HEIGHT, ULTRA SMALL, FFP16-B5, 16 PIN
NJG1125PB5-TE2	NJRC	获取价格	Amplifier,
NJG1127HB6	NJRC	获取价格	RF and Baseband Circuit, USB-8
NJG1128HB6	NJRC	获取价格	RF and Baseband Circuit, PQCC8, 1.50 X 1.50 MM, 0.55 MM HEIGHT, PLASTIC, USB-8
NJG1129MD7	NJRC	获取价格	UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
NJG1130KA1	NJRC	获取价格	GPS LOW NOISE AMPLIFIER GaAs MMIC

与NJG1119相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

6
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

11
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

NJG1119

NJG1119 技术参数

NJG1119 数据手册

与NJG1119相关器件

与NJG1119相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NJG1119

NJG1119 技术参数

NJG1119 数据手册

与NJG1119相关器件

与NJG1119相关文章

您还可以找

您在本页遇到什么问题？