Datasheet > NJ903L

NJ903L

更新时间： 2024-02-22 18:05:38

品牌	Logo	应用领域
INTERFET		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	126K
描述
Silicon Junction Field-Effect Transistor

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中文翻译

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数据手册

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NJ903L 数据手册

F-42

01/99

NJ903L Process

Silicon Junction Field-Effect Transistor

¥ Low-Current

¥ Low Gate Leakage Current

¥ High Input Impedance

S-D

D-S

Absolute maximum ratings at 25¡C free-air temperature.

Gate Current, Ig

Operating Junction Temperature, Tj

Storage Temperature, Ts

10 mA

+150°C

– 65°C to +175°C

Device in this Databook based on the NJ903L Process.

S-D

D-S

Datasheet

IF9030

Die Size = 0.040" X 0.040"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

At 25°C free air temperature:

NJ903L Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

Reverse Gate Leakage Current

Drain Saturation Current (Pulsed)

Gate Source Cutoff Voltage

– 20

– 25

– 5

I = – 1 µA, V = ØV

(BR)GSS

– 500

500

= – 15V, V = ØV

GSS

= 10V, V = ØV

DSS

– 0.1

– 3

= 10V, I = 1 nA

GS(OFF)

Dynamic Electrical Characteristics

Input Capacitance

= ØV, V = – 10V

f = 1 MHz

f = 1 kHz

iss

Feedback Capacitance

Equivalent Noise Voltage

= ØV, V = – 10V

rss

e¯

0.5

nV/√HZ V = 4V, I = 5 mA

DG D

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

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