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NJD1718T4G PDF预览

NJD1718T4G

更新时间: 2024-02-08 16:58:58
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 105K
描述
Power Transistors

NJD1718T4G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:1.54
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

NJD1718T4G 数据手册

 浏览型号NJD1718T4G的Datasheet PDF文件第2页浏览型号NJD1718T4G的Datasheet PDF文件第3页浏览型号NJD1718T4G的Datasheet PDF文件第4页浏览型号NJD1718T4G的Datasheet PDF文件第5页 
NJD1718T4G  
Power Transistors  
PNP Silicon DPAK For Surface Mount  
Applications  
Designed for highgain audio amplifier and power switching  
applications.  
http://onsemi.com  
Features  
SILICON  
POWER TRANSISTORS  
2 AMPERES  
Low CollectorEmitter Saturation Voltage −  
V
CE(sat)  
= 0.5 Vdc (Max) @ I = 1 A  
C
High Switching Speed: t  
Epoxy Meets UL 94 V0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
= 320 ns (typ)  
STG  
50 VOLTS  
15 WATTS  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAM  
4
AYWW  
J
1718G  
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS  
2
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Collector Current  
Symbol  
Value  
50  
50  
5  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
3
V
CB  
A
Y
= Assembly Location  
= Year  
V
CEO  
V
EB  
WW  
G
= Work Week  
= PbFree Device  
Continuous  
Peak  
I
C
2  
3  
Base Current  
I
0.4  
Adc  
B
ORDERING INFORMATION  
Total Device Dissipation @ T = 25°C  
P
15  
0.1  
W
W/°C  
C
D
Derate above 25°C  
Device  
NJD1718T4G  
Package  
Shipping  
Total Device Dissipation @ T = 25°C*  
P
1.68  
0.011  
W
W/°C  
DPAK  
2500 / Tape & Reel  
A
D
Derate above 25°C  
(PbFree)  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance JunctiontoCase  
JunctiontoAmbient*  
R
10  
89.3  
°C/W  
q
JC  
JA  
R
q
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 Rev. 2  
NJD1718/D  

NJD1718T4G 替代型号

型号 品牌 替代类型 描述 数据表
NJVNJD1718T4G ONSEMI

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