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NH15002 PDF预览

NH15002

更新时间: 2024-11-12 22:29:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 169K
描述
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS

NH15002 数据手册

 浏览型号NH15002的Datasheet PDF文件第2页浏览型号NH15002的Datasheet PDF文件第3页浏览型号NH15002的Datasheet PDF文件第4页 
Order this document  
by MJ15001/D  
SEMICONDUCTOR TECHNICAL DATA  
The MJ15001 and MJ15002 are EpiBase power transistors designed for high  
power audio, disk head positioners and other linear applications.  
15 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
High Safe Operating Area (100% Tested) —  
200 W @ 40 V  
50 W @ 100 V  
For Low Distortion Complementary Designs  
High DC Current Gain —  
140 VOLTS  
200 WATTS  
h
FE  
= 25 (Min) @ I = 4 Adc  
C
CASE 1–07  
TO–204AA  
(TO–3)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
140  
140  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
Collector Current — Continuous  
Base Current — Continuous  
Emitter Current — Continuous  
I
C
15  
I
5
B
E
I
20  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
200  
1.14  
Watts  
W/ C  
Operating and Storage Junction Temperature Range  
T , T  
65 to +200  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
0.875  
265  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature for Soldering Purposes:  
T
L
1/16from Case for  
10 seconds  
Motorola, Inc. 1995

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