Datasheet > NH15002

NH15002

更新时间： 2024-02-29 20:00:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	169K
描述
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS

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NH15002 数据手册

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by MJ15001/D

SEMICONDUCTOR TECHNICAL DATA

The MJ15001 and MJ15002 are EpiBase power transistors designed for high

power audio, disk head positioners and other linear applications.

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

•

High Safe Operating Area (100% Tested) —

200 W @ 40 V

50 W @ 100 V

For Low Distortion Complementary Designs

High DC Current Gain —

•

140 VOLTS

200 WATTS

= 25 (Min) @ I = 4 Adc

CASE 1–07

TO–204AA

(TO–3)

MAXIMUM RATINGS

Rating

Symbol

Value

140

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Collector Current — Continuous

Base Current — Continuous

Emitter Current — Continuous

Total Power Dissipation @ T = 25 C

Derate above 25 C

200

1.14

Watts

W/ C

Operating and Storage Junction Temperature Range

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

0.875

265

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering Purposes:

1/16″ from Case for

10 seconds

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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