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NGTB25N120SWG

更新时间： 2024-11-06 11:13:59
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
6页 154K
描述
IGBT，1200V/25A - 焊接

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中文翻译

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NGTB25N120SWG 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：6.75JESD-609代码：e3
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NGTB25N120SWG 数据手册

 浏览型号NGTB25N120SWG的Datasheet PDF文件第2页浏览型号NGTB25N120SWG的Datasheet PDF文件第3页浏览型号NGTB25N120SWG的Datasheet PDF文件第4页浏览型号NGTB25N120SWG的Datasheet PDF文件第5页浏览型号NGTB25N120SWG的Datasheet PDF文件第6页 
NGTB25N120SWG  
IGBT - Inverter Welding  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Trench construction, and provides superior performance  
in demanding switching applications, offering both low on state  
voltage and minimal switching loss. The IGBT is well suited for  
welding applications. Incorporated into the device is a soft and fast  
co−packaged free wheeling diode with a low forward voltage.  
www.onsemi.com  
Features  
25 A, 1200 V  
• T  
= 175°C  
Jmax  
VCEsat = 2.0 V  
• Soft Fast Reverse Recovery Diode  
• Optimized for High Speed Switching  
• 10 ms Short Circuit Capability  
• These are Pb−Free Devices  
Eoff = 0.60 mJ  
C
Typical Applications  
• Welding  
G
ABSOLUTE MAXIMUM RATINGS  
E
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage  
1200  
Collector current  
@ TC = 25°C  
A
50  
25  
@ TC = 100°C  
Pulsed collector current, T  
ICM  
IF  
100  
A
A
pulse  
G
TO−247  
CASE 340AL  
limited by T  
Jmax  
C
E
Diode forward current  
@ TC = 25°C  
50  
25  
@ TC = 100°C  
Diode pulsed current, T  
limited  
IFM  
100  
A
V
pulse  
MARKING DIAGRAM  
by T  
Jmax  
Gate−emitter voltage  
Transient gate−emitter voltage  
(T = 5 ms, D < 0.10)  
VGE  
$20  
30  
pulse  
Power Dissipation  
PD  
W
@ TC = 25°C  
@ TC = 100°C  
385  
192  
25N120S  
AYWWG  
Short Circuit Withstand Time  
T
10  
ms  
°C  
SC  
V
GE  
= 15 V, V = 500 V, T ≤ 150°C  
CE J  
Operating junction temperature  
range  
T
−55 to +175  
J
Storage temperature range  
T
−55 to +175  
260  
°C  
°C  
stg  
A
Y
= Assembly Location  
= Year  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Device  
NGTB25N120SWG  
Package  
Shipping  
TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
November, 2017 − Rev. 2  
NGTB25N120SW/D  
123456

中文翻译

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NGTB25N120SWG 替代型号

型号 品牌 替代类型 描述 数据表
IKW25N120T2 INFINEON

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