NEZ5964-4D

更新时间： 2024-02-18 07:56:36

品牌	Logo	应用领域
日电电子 - NEC		晶体射频场效应晶体管局域网
页数	文件大小	规格书
18页	110K
描述
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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中文翻译

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技术参数
数据手册

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NEZ5964-4D 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.7	FET 技术：	METAL SEMICONDUCTOR
最高频带：	C BAND	JESD-30 代码：	R-CDFM-F2
端子数量：	2	工作模式：	DEPLETION MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

NEZ5964-4D 数据手册

PRELIMINARY DATA SHEET

GaAs MES FET

4W/8W C-BAND POWER GaAs FET NEZ Series

4W/8W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

PACKAGE DIMENSIONS (unit: mm)

0.5±0.1

The NEZ Series of microwave power GaAs FETs offer

high output power, high gain and high efficiency at C-band

for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are

designed to provide good flatness of gain and output power

in allocated band.

C1.5 4PLACES

GATE

2.4

SOURCE

R1.6 2PLACES

To reduce the thermal resistance, the device has a PHS

(Plated Heat Sink) structure.

NEC’s strigent quality assurance and test procedures

guarantee the highest reliability and performance.

DRAIN

17.0±0.2

21.0±0.3

SELECTION CHART

10.7

NEZ PART NUMBER

NEZ3642-4D, 8D, 8DD

FREQUENCY BAND (GHz)

3.6 to 4.2

NEZ4450-4D, 4DD/8D, 8DD

NEZ5964-4D, 4DD/8D, 8DD

NEZ6472-4D, 4DD/8D, 8DD

NEZ7177-4D, 4DD/8D, 8DD

NEZ7785-4D, 4DD/8D, 8DD

4.4 to 5.0

5.9 to 6.45

12.0

6.4 to 7.2

7.1 to 7.7

7.7 to 8.5

FEATURES

•

Internally matched to 50 Ω

High power output

High linear gain

High reliability

Low distortion

Document No. P10981EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6 7...18

中文翻译

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与NEZ5964-4D相关器件

型号	品牌	获取价格	描述	数据表
NEZ5964-4DD	NEC	获取价格	4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEZ5964-4DL	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se
NEZ5964-4DL	NEC	获取价格	RF Power Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor
NEZ5964-8B	NEC	获取价格	C-BAND POWER GAAS MESFET
NEZ5964-8BD	NEC	获取价格	C-BAND POWER GAAS MESFET
NEZ5964-8D	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se
NEZ5964-8D	NEC	获取价格	4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEZ5964-8DD	NEC	获取价格	4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEZ5964-8DL	NEC	获取价格	RF Power Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor
NEZ5964-8DL	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Se