生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.34 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.2 A |
基于收集器的最大容量: | 1.1 pF | 集电极-发射极最大电压: | 5.5 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON GERMANIUM |
标称过渡频率 (fT): | 11500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NESG220034-T1 | NEC | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M |
获取价格 |
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NESG220034-T1 | RENESAS | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M |
获取价格 |
|
NESG220034-T1-A | NEC | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M |
获取价格 |
|
NESG220034-T1-A | RENESAS | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3 |
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|
NESG220034-T1-FB-A | RENESAS | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3 |
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|
NESG220034-T1FB-A | NEC | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silic |
获取价格 |