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NESG220034-FB-A PDF预览

NESG220034-FB-A

更新时间: 2024-01-07 13:14:56
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器ISM频段晶体管
页数 文件大小 规格书
11页 219K
描述
UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3

NESG220034-FB-A 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
基于收集器的最大容量:1.1 pF集电极-发射极最大电压:5.5 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PSSO-F3JESD-609代码:e6
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON GERMANIUM
标称过渡频率 (fT):11500 MHzBase Number Matches:1

NESG220034-FB-A 数据手册

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NESG220034  
The information in this document is current as of November, 2009. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products  
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or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
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customers or third parties arising from the use of these circuits, software and information.  
While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers  
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M8E0904E  

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