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NDT014_NL PDF预览

NDT014_NL

更新时间: 2024-02-26 23:39:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
10页 226K
描述
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

NDT014_NL 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.32
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):2.7 A最大漏极电流 (ID):2.8 A
最大漏源导通电阻:0.16 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3 W最大脉冲漏极电流 (IDM):10 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NDT014_NL 数据手册

 浏览型号NDT014_NL的Datasheet PDF文件第1页浏览型号NDT014_NL的Datasheet PDF文件第2页浏览型号NDT014_NL的Datasheet PDF文件第4页浏览型号NDT014_NL的Datasheet PDF文件第5页浏览型号NDT014_NL的Datasheet PDF文件第6页浏览型号NDT014_NL的Datasheet PDF文件第7页 
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Symbol Parameter Conditions  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Min  
Typ  
Max Units  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
Maximum Pulsed Drain-Source Diode Forward Current  
2.7  
22  
A
A
ISM  
VSD  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
VGS = 0 V, IS = 2.7A (Note 2)  
0.95  
1.6  
140  
V
ns  
trr  
VGS = 0 V, IF = 10 A, dIF/dt = 100 A/µs  
Notes:  
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by  
design while RqCA is determined by the user's board design.  
T - T  
T - T  
= I2 (t) ´ RDS(ON  
J
A
J
A
( )  
PD t =  
=
(t)  
)
T
J
D
R
R
+R t  
( )  
C qCA  
qJ  
A
qJ  
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:  
a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.  
b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.  
c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.  
1c  
1b  
1a  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.  
NDT014 Rev. C1  

STM32F103C8T6 替代型号

型号 品牌 替代类型 描述 数据表

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