生命周期: | Obsolete | 包装说明: | DIP |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 主体宽度: | 12.5 mm |
主体高度: | 12.16 mm | 主体长度或直径: | 20.84 mm |
内置特性: | TEC, THERMISTOR | 最长下降时间: | 2 ns |
光纤设备类型: | LASER DIODE MODULE EMITTER | 光纤类型: | 9/125, SMF |
安装特点: | PANEL MOUNT, THROUGH HOLE MOUNT | 最大工作波长: | 1330 nm |
最小工作波长: | 1290 nm | 标称工作波长: | 1310 nm |
封装形式: | DIP | 上升时间: | 2 ns |
光谱宽度: | 5 nm | 表面贴装: | NO |
最小阈值电流: | 35 mA | 传输类型: | DIGITAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDL7502PC | RENESAS |
获取价格 |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, PANEL MOUNT, THROUGH HOLE MOUNT, DIP, | |
NDL7503P | NEC |
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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7503P1 | NEC |
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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7503P1C | NEC |
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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7503P1D | NEC |
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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7503PC | NEC |
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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7503PD | NEC |
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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7510P | NEC |
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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7512P | NEC |
获取价格 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | |
NDL7512P | RENESAS |
获取价格 |
FIBER OPTIC LASER DIODE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, DIP, HERMETIC SEALED, DI |