Datasheet > NCV57201DR2G

NCV57201DR2G

更新时间： 2024-11-24 11:13:27

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
18页	690K
描述
Half Bridge Gate Driver (Isolated High Side & Non-Isolated Low Side)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCV57201DR2G 数据手册

Half Bridge Gate Driver

(Isolated High &

Non-Isolated Low)

NCD57201, NCV57201

The NCx57201 is a high voltage gate driver with one non−isolated

low side gate driver and one galvanically isolated high or low side gate

driver. It can directly drive two IGBTs in a half bridge configuration.

Isolated high side driver can be powered with an isolated power supply

or with Bootstrap technique from the low side power supply.

www.onsemi.com

The galvanic isolation for the high side gate driver guarantees

reliable switching in high power applications for IGBTs that operate

up to 800 V, at high dv/dt. The optimized output stages provide a mean

of reducing IGBT losses. Its features include two independent inputs,

accurate asymmetric UVLOs, and short and matched propagation

delays. The NCx57201 operates with its V_DD/V_BSup to 20 V.

SOIC−8 NB

CASE 751−07

NOTE: x = D or V

MARKING DIAGRAM

Features

• High Peak Output Current (+1.9 A/−2.3 A)

• Low Output Voltage Drop for Enhanced IGBT Conduction

• Floating Channel for Bootstrap Operation up to +800 V

• CMTI up to 100 kV/ms

57201

ALYWX

• Reliable Operation for V Negative Swing to −800 V

• VDD & VBS Supply Range up to 20 V

• 3.3 V, 5 V, and 15 V Logic Input

• Asymmetric Under Voltage Lockout Thresholds for High Side and

Low Side

• Matched Propagation Delay 90 ns

• Built−in 20 ns Minimum Pulse Width Filter (or Input Noise Filter)

• Non−Inverting Output Signal

57201

= Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

PIN CONNECTIONS

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

V_DD

HIN

V_B

V_S

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

LIN

Typical Applications

GND

• Fans, Pumps

• Home Appliances

• Consumer Electronics

• General Purpose Half Bridge Applications

• Automotive Applications

ORDERING INFORMATION

See detailed ordering and shipping information on page 15 of

this data sheet.

Publication Order Number:

January, 2021 − Rev. 1

NCD57201/D

12 3 4 5 6 7...18

中文翻译

下载PDF

与NCV57201DR2G相关器件

型号	品牌	获取价格	描述	数据表
NCV57252DWR2G	ONSEMI	获取价格	Isolated Dual-Channel IGBT Gate Driver
NCV57255DR2G	ONSEMI	获取价格	Isolated Dual-Channel IGBT Gate Driver
NCV57302	ONSEMI	获取价格	3.0 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator
NCV57302DSADJR4G	ONSEMI	获取价格	3.0 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator
NCV57530DWKR2G	ONSEMI	获取价格	Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance
NCV57540DWKR2G	ONSEMI	获取价格	Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance
NCV59150	ONSEMI	获取价格	1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS18R4G	ONSEMI	获取价格	1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS25R4G	ONSEMI	获取价格	1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS28R4G	ONSEMI	获取价格	1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series

与NCV57201DR2G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

NCV57201DR2G

NCV57201DR2G 数据手册

与NCV57201DR2G相关器件

与NCV57201DR2G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NCV57201DR2G

NCV57201DR2G 数据手册

与NCV57201DR2G相关器件

与NCV57201DR2G相关文章

您还可以找

您在本页遇到什么问题？