5秒后页面跳转
NCV57255DR2G PDF预览

NCV57255DR2G

更新时间: 2024-11-24 11:10:51
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
24页 837K
描述
Isolated Dual-Channel IGBT Gate Driver

NCV57255DR2G 数据手册

 浏览型号NCV57255DR2G的Datasheet PDF文件第2页浏览型号NCV57255DR2G的Datasheet PDF文件第3页浏览型号NCV57255DR2G的Datasheet PDF文件第4页浏览型号NCV57255DR2G的Datasheet PDF文件第5页浏览型号NCV57255DR2G的Datasheet PDF文件第6页浏览型号NCV57255DR2G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
Isolated Dual Channel  
IGBT/MOSFET Gate Driver  
1
SOIC16  
D SUFFIX  
NCD57252, NCD57253,  
NCD57255, NCD57256,  
NCV57252, NCV57253,  
NCV57255, NCV57256  
NCx5725y are highcurrent two channel isolated IGBT/MOSFET  
SOIC16 WB  
CASE 751B05  
CASE 751G03  
MARKING DIAGRAMS  
16  
5725y  
AWLYYWWG  
5725y  
AWLYWWG  
gate drivers with 2.5 or 5 kV * internal galvanic isolation from input  
rms  
to each output and functional isolation between the two output  
channels. The device accepts 3.3 V to 20 V bias voltage and signal  
levels on the input side and up to 32 V bias voltage on the output side.  
The device accepts complementary inputs and offers separate pins for  
Disable and Dead Time control for system design convenience.  
Drivers are available in wide body SOIC16 and narrow body  
SOIC16 package.  
1
1
5725y  
= Specific Device Code  
y = 2, 3, 5 or 6  
= Assembly Location  
= Wafer Lot  
A
WL  
YY, Y  
WW  
G
= Year  
= Work Week  
= PbFree Package  
Features  
(See page 21)  
High Peak Output Current ( 6.5 A*, 3.5 A*)  
Configurable as a Dual LowSide or Dual HighSide or HalfBridge  
PIN CONNECTIONS  
Driver  
Programmable Overlap or Dead Time control  
Disable Pin to Turn Off Outputs for Power Sequencing  
INA  
INB  
V
DDA  
OUTA  
GNDA  
NC  
ANB Function to Offer Flexibility to Set up the Driver as  
Halfbridge Driver Operating with a Single Input Signal  
IGBT/MOSFET Gate Clamping during Short Circuit  
Short Propagation Delays with Accurate Matching  
V
DDI  
GND  
DIS  
DT  
NC  
V
DDB  
Tight UVLO Thresholds on all Power Supplies  
3.3 V, 5 V, and 15 V Logic Input  
ANB  
OUTB  
GNDB  
2.5 or 5 kV * Galvanic Isolation from Input to each Output  
rms  
V
DDI  
and 1.5 kV Differential Voltage between Output Channels  
rms  
NCx5725y  
x = D or V  
1200 V Working Voltage (per VDE088411 Requirements)  
High Common Mode Transient Immunity  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 21 of  
this data sheet.  
This Device is PbFree, Halogen Free/BFR Free and is RoHS  
Compliant  
Typical Applications  
EV Chargers  
Motor Control  
Uninterruptible Power Supplies (UPS)  
Industrial Power Supplies  
Solar Inverters  
Automotive Applications  
*Depends on package variant, see Page 6, 21.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
June, 2023 Rev. 5  
NCD57252/D  

与NCV57255DR2G相关器件

型号 品牌 获取价格 描述 数据表
NCV57302 ONSEMI

获取价格

3.0 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator
NCV57302DSADJR4G ONSEMI

获取价格

3.0 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator
NCV57530DWKR2G ONSEMI

获取价格

Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance
NCV57540DWKR2G ONSEMI

获取价格

Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance
NCV59150 ONSEMI

获取价格

1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS18R4G ONSEMI

获取价格

1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS25R4G ONSEMI

获取价格

1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS28R4G ONSEMI

获取价格

1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS30R4G ONSEMI

获取价格

1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series
NCV59150DS33R4G ONSEMI

获取价格

1.5 A, Very Low-Dropout (VLDO) Fast Transient Response Regulator Series