Datasheet > NCV451AMNWTBG

NCV451AMNWTBG

更新时间： 2024-11-24 11:15:55

品牌	Logo	应用领域
安森美 - ONSEMI		开关
页数	文件大小	规格书
10页	152K
描述
3A 超低导通电阻和控制负载开关，带自动放电路径

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中文翻译

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数据手册

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NCV451AMNWTBG 数据手册

NCV451

3A Ultra-Small Low Ron

and Controlled Load Switch

with Auto-Discharge Path

The NCV451 is a very low Ron MOSFET controlled by external

logic pin, allowing optimization of battery life, and portable device

autonomy.

www.onsemi.com

Indeed, due to a current consumption optimization with NMOS

structure, leakage currents are eliminated by isolating connected IC on

the battery when not used.

MARKING

DIAGRAM

Output discharge path is also embedded to eliminate residual

voltages on the output rail.

Proposed in a wide input voltage range from 0.75 V to 5.5 V, in a

small DFNW6 2.2 x 2 mm, 0.65 pitch package.

4A MG

DFNW6

CASE 507AF

Features

= Specific Device Code

= Date Code

= Pb−Free Package

• 0.75 V – 5.5 V Operating Range

• 21 mW N MOSFET from 3.6 V to 5.5 V

• 22 mW N MOSFET from 1 V to 3.3 V

• DC Current Up to 3 A

• Output Auto−Discharge

• Active High EN Pin

• DFNW6 2.2 x 2 mm, 0.65 pitch

(Note: Microdot may be in either location)

PINOUT DIAGRAM

GND

OUT

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

EPAD

Typical Applications

• ADAS System

• Camera Module

• Power Management

(Top View)

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 8 of this data sheet.

Publication Order Number:

August, 2018 − Rev. 0

NCV451/D

12 3 4 5 6 7...10

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