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NCP4685ESQ15T1G

更新时间： 2024-01-19 21:44:00
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器
页数 文件大小 规格书
6页 107K
描述
150 mA, Ultra Low Supply Current, Low Dropout Regulator

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NCP4685ESQ15T1G 数据手册

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NVTFS5826NL  
Power MOSFET  
60 V, 24 mW, 20 A, Single N−Channel  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• NV Prefix for Automotive and Other Applications Requiring  
AEC−Q101 Qualified Site and Change Controls  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
24 mW @ 10 V  
32 mW @ 4.5 V  
60 V  
20 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
N−Channel  
D (5 − 8)  
V
DSS  
Gate−to−Source Voltage  
V
20  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
20  
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
14  
2, 3, 4)  
Steady  
State  
G (4)  
Power Dissipation  
T
mb  
P
22  
W
A
D
D
R
Y
(Notes 1, 2, 3)  
J−mb  
T
mb  
= 100°C  
11  
S (1, 2, 3)  
Continuous Drain Cur-  
T = 25°C  
I
D
7.6  
5.4  
3.2  
1.6  
127  
A
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
Steady  
State  
MARKING DIAGRAM  
1
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
W
A
1
R
q
S
S
S
G
D
D
D
D
JA  
T = 100°C  
A
5826  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+175  
5826  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
Source Current (Body Diode)  
I
S
18  
20  
A
Single Pulse Drain−to−Source Avalanche  
E
mJ  
AS  
= Work Week  
Energy (T = 25°C, V = 24 V, V = 10 V,  
J
DD  
GS  
= Pb−Free Package  
I
= 20 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NVTFS5826NLTAG  
WDFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
NVTFS5826NLTWG  
WDFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
Junction−to−Mounting Board (top) − Steady  
State (Note 2 and 3)  
R
Y
6.8  
°C/W  
J−mb  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient − Steady State (Note 3)  
R
q
47  
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 − Rev. 0  
NVTFS5826NL/D  
 
123456

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