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NCP4685ESQ33T1G

更新时间： 2024-11-23 10:28:07
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器
页数 文件大小 规格书
6页 107K
描述
150 mA, Ultra Low Supply Current, Low Dropout Regulator

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中文翻译

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NCP4685ESQ33T1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：SOIC包装说明：TSOP, SOT-343R
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：1 week风险等级：5.6
可调性：FIXED最大回动电压 1：0.32 V
标称回动电压 1：0.24 V最大绝对输入电压：6 V
最大输入电压：5.25 V最小输入电压：1.7 V
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
长度：2 mm最大电网调整率：0.00396%
最大负载调整率：0.02%湿度敏感等级：1
功能数量：1输出次数：1
端子数量：4工作温度TJ-Max：150 °C
工作温度TJ-Min：-40 °C最大输出电流 1：0.15 A
最大输出电压 1：3.3495 V最小输出电压 1：3.2505 V
标称输出电压 1：3.3 V封装主体材料：PLASTIC/EPOXY
封装代码：TSOP封装等效代码：SOT-343R
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
包装方法：TAPE AND REEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified调节器类型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度：1.1 mm子类别：Other Regulators
表面贴装：YES技术：CMOS
端子面层：Tin (Sn)端子形式：GULL WING
端子节距：1.3 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：1.5%
宽度：1.25 mmBase Number Matches：1

NCP4685ESQ33T1G 数据手册

 浏览型号NCP4685ESQ33T1G的Datasheet PDF文件第2页浏览型号NCP4685ESQ33T1G的Datasheet PDF文件第3页浏览型号NCP4685ESQ33T1G的Datasheet PDF文件第4页浏览型号NCP4685ESQ33T1G的Datasheet PDF文件第5页浏览型号NCP4685ESQ33T1G的Datasheet PDF文件第6页 
NVTFS5826NL  
Power MOSFET  
60 V, 24 mW, 20 A, Single N−Channel  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• NV Prefix for Automotive and Other Applications Requiring  
AEC−Q101 Qualified Site and Change Controls  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
24 mW @ 10 V  
32 mW @ 4.5 V  
60 V  
20 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
N−Channel  
D (5 − 8)  
V
DSS  
Gate−to−Source Voltage  
V
20  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
20  
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
14  
2, 3, 4)  
Steady  
State  
G (4)  
Power Dissipation  
T
mb  
P
22  
W
A
D
D
R
Y
(Notes 1, 2, 3)  
J−mb  
T
mb  
= 100°C  
11  
S (1, 2, 3)  
Continuous Drain Cur-  
T = 25°C  
I
D
7.6  
5.4  
3.2  
1.6  
127  
A
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
Steady  
State  
MARKING DIAGRAM  
1
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
W
A
1
R
q
S
S
S
G
D
D
D
D
JA  
T = 100°C  
A
5826  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+175  
5826  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
Source Current (Body Diode)  
I
S
18  
20  
A
Single Pulse Drain−to−Source Avalanche  
E
mJ  
AS  
= Work Week  
Energy (T = 25°C, V = 24 V, V = 10 V,  
J
DD  
GS  
= Pb−Free Package  
I
= 20 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NVTFS5826NLTAG  
WDFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
NVTFS5826NLTWG  
WDFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
Junction−to−Mounting Board (top) − Steady  
State (Note 2 and 3)  
R
Y
6.8  
°C/W  
J−mb  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient − Steady State (Note 3)  
R
q
47  
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 − Rev. 0  
NVTFS5826NL/D  
 
123456

中文翻译

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NCP4685ESQ33T1G 替代型号

型号 品牌 替代类型 描述 数据表
NCP4682DSQ33T1G ONSEMI

完全替代

 150 mA, Ultra Low Supply Current, Low Dropout Regulator
NCP582LSQ33T1G ONSEMI

类似代替

 Ultra-Fast, Low Noise 150 mA CMOS LDO
NCP562SQ33T1G ONSEMI

类似代替

 80 mA CMOS Low Iq Low-Dropout Voltage Regulator

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