Datasheet > NCP302035

NCP302035

更新时间： 2024-12-02 01:23:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
17页	425K
描述
Integrated Driver and MOSFET

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NCP302035 数据手册

NCP302035

Integrated Driver

and MOSFET

Description

The NCP302035 integrates a MOSFET driver, high-side MOSFET

and low-side MOSFET into a single package.

The driver and MOSFETs have been optimized for high-current

DC−DC buck power conversion applications. The NCP302035

integrated solution greatly reduces package parasitics and board space

compared to a discrete component solution.

www.onsemi.com

Features

PQFN31 5x5, 0.5P

Case 483BR

• Capable of Average Currents up to 35 A

• Capable of Switching at Frequencies up to 2 MHz

• Capable of Peak Currents up to 70 A

• Compatible with 3.3 V or 5 V PWM Input

• Responds Properly to 3-level PWM Inputs

• Option for Zero Cross Detection with 3-level PWM

• Internal Bootstrap Diode

MARKING DIAGRAM

302035

AZZYYWW

• Undervoltage Lockout

• Supports Intel Power State 4

= Assembly Location

ZZ = Wafer Lot

YY = Year

WW = Work Week

• Thermal Warning output

• Thermal Shutdown

Applications

PINOUT DIAGRAM

• Desktop & Notebook Microprocessors

5 V

VIN

THWN

DISB#

VCCD

PGND

VCCD VCC VIN

THWN

BOOT

DISB#

AGND

DRVON from Controller

PWM from Controller

SMOD from Controller

PWM

PGND

SMOD#

VSW

VOUT

VSW

CGND

PGND

Figure 1. Application Schematic

ORDERING INFORMATION

†

Device

Package

Shipping

NCP302035MNTWG

PQFN31

3000 /

(Pb−Free)

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2017 − Rev. 1

NCP302035/D

12 3 4 5 6 7...17

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