Datasheet > NCP302155RMNTWG

NCP302155RMNTWG

更新时间： 2023-09-03 20:28:24

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
16页	940K
描述
Integrated Driver and MOSFET

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中文翻译

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数据手册

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NCP302155RMNTWG 数据手册

DATA SHEET

www.onsemi.com

Integrated Driver and

MOSFET

NCP302155R

The NCP302155R integrates a MOSFET driver, high−side

MOSFET and low−side MOSFET into a single package.

PQFN31 5X5, 0.5P

CASE 483BR

The driver and MOSFETs have been optimized for high−current

DC−DC buck power conversion applications. The NCP302155R

integrated solution greatly reduces package parasitics and board space

compared to a discrete component solution.

MARKING DIAGRAM

Pin1

NCP

Features

302155R

AWLYYWW

• Capable of Average Currents up to 55 A

• Capable of Peak Currents up to 80 A

• Capable of Switching at Frequencies up to 2 MHz

• Compatible with 3.3 V or 5 V PWM Input

• Responds Properly to 3−level PWM Inputs

• Internal Bootstrap Diode

• Undervoltage Lockout

• Supports Intel® Power State 4

• Thermal Warning output

= Assembly Location

WL = Wafer Lot

YY = Year

WW = Work Week

PINOUT DIAGRAM

Applications

VIN

• Desktop and All−in−One Computers, V−Core and Non−V−Core

DC−DC Converters

• High−Current DC−DC Point−of−Load Converters

• Small Form−Factor Voltage Regulator Modules

THWN

AGND

VCCD

PGND

VSW

ORDERING INFORMATION

†

Device

Package

Shipping

NCP302155RMNTWG PQFN31

3000 / Tape &

Reel

(Pb−Free)

Figure 1. Application Schematic

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

May, 2023 − Rev. 0

NCP302155R/D

12 3 4 5 6 7...16

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